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Phase Segregation During Laser Melting of Ni-Si and Co-Si Films

Published online by Cambridge University Press:  15 February 2011

M.A. Bosch ,
A.H. Dayem ,
T.R. Harrison  and
R.A. Lemons
M.A. Bosch
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
A.H. Dayem
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
T.R. Harrison
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
R.A. Lemons
Affiliation:
Lemons Bell Laboratories, Holmdel, New Jersey, 7733
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Abstract

In this study Ni-Si and Co-Si films were deposited on fused quartz substrates by coevaporating the metal and silicon. The source separation and deposition rate were chosen to produce a composition range across the substrate. These films were then melted with a scanned cw argon laser beam. This results in a dramatic phase segregation that is readily observed in a light or scanning electron microscope. For the Ni-Si sample two phases separate into irregularly shaped regions up to ≈l10μm size. Electron microprobe measurements indicate that one phase is NiSi2 while the other is pure Si. With the Co-Si sample two phases segregate into narrow stripes that usually follow the temperature gradient produced by the scanned laser beam. The composition analysis indicates that these phases are CoSi and CoSi2. A possible cause for this morphology is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 431
Copyright
Copyright © Materials Research Society 1982

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References

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