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Phase Separation In III-V Semiconductors

Published online by Cambridge University Press:  15 February 2011

K. C. Hsieh  and
K. Y. Cheng
K. C. Hsieh
Affiliation:
Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois, Urbana, IL 61801
K. Y. Cheng
Affiliation:
Department of Electrical and Computer Engineering, Center for Compound Semiconductor Microelectronics, and Materials Research Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

Data are presented to show the morphological instability as well as the occurrence of 1-dimensional phase separation through the spinodal decomposition process in the strained layer heteroepitaxy of short-period superlattices. Biaxial strain has been attributed to be the driving force. With a large net strain in the epitaxial film, > 3.5%, island growth of (InAs)1/(GaAs)1 on GaAs is observed. With a near zero net strain, however, 1-dimensional lateral compositional modulation is observed in the growth of (InAs)2/(GaAs)2 on InP and (InP)2/(GaP)2 on GaAs substrates. Both surface reaction and bulk diffusion take part in forming the ultimate modulation. A small but definitive hydrostatic strain in the metastable Al0.3Ga0.7As film grown at low temperature induces also a 1-dimensional compositional modulation upon annealing at 600°C, a direct evidence of the existence of a miscibility gap in strained AlxGa1-xAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 145
Copyright
Copyright © Materials Research Society 1995

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