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Phase Transitions in Amorphous SI Produced by Pulsed Laser or Electron Irradiation

Published online by Cambridge University Press:  15 February 2011

P. Baeri ,
G. Foti ,
J. M. Poate  and
A. G. Cullis
P. Baeri
Affiliation:
Bell Laboratories, Murray Hill, N.J., 7974
G. Foti
Affiliation:
Bell Laboratories, Murray Hill, N.J., 7974
J. M. Poate
Affiliation:
Bell Laboratories, Murray Hill, N.J., 7974
A. G. Cullis
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs WR14 3PS, England
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Abstract

Amorphous, implanted, Si layers have been melted by pulsed electron irradiation. Implanted As has been used as a marker for determining melt duration. Systematic differences between As diffusion in initially amorphous or crystalline Si are interpreted in terms of different enthalpies of melting between amorphous (1220 J/g) and crystalline (1790 J/g) Si. The amorphous Si layers melt and crystallize at significantly lower electron energies than those required to melt crystalline Si, indicating that amorphous Si melts at 1170K compared to 1685 K for crystalline Si. We have used these thermodynamic parameters to successfully predict some of the phenomena associated with the laser induced melting and crystallization of amorphous Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 39
Copyright
Copyright © Materials Research Society 1981

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References

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