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Photocapacitance of Hydrogenated Amorphous Silicon Phototransistors

Published online by Cambridge University Press:  17 March 2011

D. Caputo ,
G. de Cesare ,
F. Lemmi ,
A. Nascetti ,
F. Palma ,
F. Roca  and
M. Tucci
D. Caputo
Affiliation:
University of Rome “ Sapienza”, Department of Electronic Engineering, Rome, 00184, Italy
G. de Cesare
Affiliation:
University of Rome “ Sapienza”, Department of Electronic Engineering, Rome, 00184, Italy
F. Lemmi
Affiliation:
University of Rome “ Sapienza”, Department of Electronic Engineering, Rome, 00184, Italy
A. Nascetti
Affiliation:
University of Rome “ Sapienza”, Department of Electronic Engineering, Rome, 00184, Italy
F. Palma
Affiliation:
University of Rome “ Sapienza”, Department of Electronic Engineering, Rome, 00184, Italy
F. Roca
Affiliation:
ENEA Research Center Località Granatello Portici (NA) 80055, Italy
M. Tucci
Affiliation:
ENEA Research Center Località Granatello Portici (NA) 80055, Italy
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Abstract

Amorphous silicon-based phototransistors are studied as an alternative solution to replace pixel-level amplifiers simplifying large-area imaging systems. We report electrical characterization by means of current-voltage and capacitance measurements. The measured capacitance increases with decreasing frequency of the probe signal and values largely exceeding the geometrical one at low frequencies have been achieved both in the dark and under illumination. In particular, values in excess of 200 μF/cm2 are measured under 220 μW/cm2 illumination at 600 nm at 100 mHz. The capacitance dependence on frequency is interpreted in terms of trapping and release kinetics processes in the base and of the gain of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A26.3.1
Copyright
Copyright © Materials Research Society 2001

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References

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