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Photoelectrochemical Etching of InxGal-xN

Published online by Cambridge University Press:  15 February 2011

Hyun Cho ,
S.M. Donovan ,
C.R. Abernathy ,
S.J. Pearton ,
F. Ren ,
J. Han  and
R.J. Shul
Hyun Cho
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.M. Donovan
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
C.R. Abernathy
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
S.J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville FL 32611
F. Ren
Affiliation:
Department of Chemical Engineering, University of Florida, Gainesville FL 32611
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
R.J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185
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Abstract

A comparison of KOH, NaOH and AZ400K solutions for UV photo-assisted etching of undoped and n+ GaN is discussed. The etching is diffusion-limited (Ea < 6kCal-mol-1) under all conditions and is significantly faster with bias applied to the sample during light exposure. No etching of InN was observed, due to the very high n-type background doping (> 1020cm-3) in the material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.40
Copyright
Copyright © Materials Research Society 1999

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References

1.see for example, Vartuli, C.B., Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Ren, F., Zolper, J.C. and Shul, R.J., Solid State Electron. 41 1947 (1997).Google Scholar
2. Shintani, A. and Minagawa, S., J. Electrochem. Soc. 123 707 (1996).Google Scholar
3. Kozawa, T., Kachi, T., Ohwaki, T., Tager, Y., Koide, N. and Koike, M., J. Electrochem. Soc. 143 L17 (1996).Google Scholar
4. Stocker, D.A., Schubert, E.F. and Redwing, J.M., Appl. Phys. Lett. 73 2788 (1998).Google Scholar
5. Kim, B.J., Lee, J.W., Park, H.S., Park, Y. and Kim, T.I., J. Electron. Mater. 27 L32 (1998).Google Scholar
6. Mileham, J. R, Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Shul, R.J. and Kilcoyne, S.P., Appl. Phys. Lett. 67 1119 (1995).Google Scholar
7. Mileham, J. R, Pearton, S.J., Abernathy, C.R., MacKenzie, J.D., Shul, R.J. and Kilcoyne, S.P., J. Vac. Sci. Technol. A14 836 (1996).Google Scholar
8. Guo, Q.X., Kato, O. and Adesida, A., J. Electrochem. Soc. 139 2008 (1992).Google Scholar
9. Vartuli, C.B., Pearton, S.J., Lee, J.W., Abernathy, C.R., MacKenzie, J.D., Zolper, J.C., Shul, R.J. and Ren, F., J. Electrochem. Soc. 143 3681 (1996).Google Scholar
10. Shor, J.S. and Osgood, R.M. Jr, J. Electrochem. Soc. 140 L123 (1993).Google Scholar
11. Grove, M.J., Hudson, D.A., Zory, P.S., Dalby, R.J., Harding, C.M. and Rosenberg, A., J. Appl. Phys. 76 587 (1994).Google Scholar
12. Ruberto, M.N., Zhang, X., Scarmozzino, R., Willner, A.E., Podlesnik, D.V., and Osgood, R.M. Jr, J. Electrochem. Soc. 138 1174 (1991).Google Scholar
13. Khare, R. and Hu, E.L., J. Electrochem. Soc. 138 1516 (1991).Google Scholar
14. Ven, J. van de and Nabben, H.J.P., J. Electrochem. Soc. 137 1603 (1990).Google Scholar
15. Minsky, M.S., White, M. and Hu, E.L., Appl. Phys. Lett. 68 1531 (1996).Google Scholar
16. Youtsey, C., Adesida, I., Romano, L.T. and Bulman, G., Appl. Phys. Lett. 72 560 (1998).Google Scholar
17. Youtsey, C., Bulman, G. and Adesida, I., J. Electron. Mater. 27 282 (1998).Google Scholar
18. Youtsey, C., Adesida, I. and Bulman, G., Appl. Phys. Lett. 71 2151 (1997).Google Scholar
19. Leonard, R.T. and Bedair, S.M., Appl. Phys. Lett. 68 794 (1996).Google Scholar
20. Youtsey, C., Adesida, I. and Bulman, G., Electron. Lett. 33 245 (1997).Google Scholar
21. Peng, L.-H., Chuang, C.-W., Hsu, Y.-C., Ho, J.-K., Huang, C.-N. and Chen, C.-Y., IEEE J. Selected Topics in Quantum Electronics 4 564 (1998).Google Scholar
22. Lu, H., Wu, Z. and Bhat, I., J. Electrochem. Soc. 144 L8 (1997).Google Scholar
23. Peng, L.-H., Chuang, C.-W., Ho, J.-K., Huang, C.N. and Chen, C.-Y., Appl. Phys. Lett. 72 939 (1998).Google Scholar
24. O, J., Zory, P.S. and Bour, D.P., SPIE Proc. 3002 117 (1997).Google Scholar