Skip to main content Accessibility help

Photoemission Study of the α-Sn/Cdte(110) Interface Growth

  • Ming Tang (a1), David W. Niles (a1), Isaac Hernández-Calderón (a2) and Hartmut Hóchst (a1)


Angular Resolved Photoemission Spectroscopy with Synchrotron radiation has been used to study the MBE growth of α-Sn on CdTe(110). Sn grows epitaxially and the Fermi level pins at 0.72eV above the CdTe valence band maximum. Outdiffusion or segregation of Cd in the α-Sn layer is not observed. For small Sn coverages the Sn4d core spectra show a second component which may be due to the initial interfacial growth of SnTe.



Hide All
1. Broerman, G.A., Phys. Rev. Letters, 45, 747 (1980)
2. Farrow, R.F.C., Robertson, D.S., Williams, G.M., Cullis, A.G., Jones, G.R., Young, I.M. and Dennis, P.N.J., J. of Crystal Growth. North-Holland. 54, 507 (1981)
3. Höchst, H. and Hernández-Calderón, I., Surf. Sci. 126, 25 (1983)
4. Hernández-Calderón, I. and Höchst, H., Phys. Rev. B 27, 4961 (1983)
5. Höchst, H. and Hernández-Calderón, I., J. Vac. Sci. Technol. A 3, 911 (1985)
6. Viña, L., Höchst, H. and Cardona, M., Phys. Rev. B 31 958 (1985)
7. Menéndez, J. and Höchst, H., Thin Solid Films. 111, 375 (1984)
8. Ming, Tang, Niles, D.W., Hernández-Calderón, I., and Höchst, H., to be published
9. Craig, B.I. and Garrison, B.J., Phys. Rev. B 33, 8130 (1986)
10. John, P., Miller, T., Hsieh, T.C., Shapiro, A.P., Wachs, A.L. and Chiang, T.C., Phys. Rev. B 34, 6704 (1986)
11. Tang, Ming, Niles., D.W Hernández-Calderón, I. and Höchst, H., to be published Phys. Rev. B (1987)


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed