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Photoluminescence and Photoluminescence Excitation Spectroscopy of In Situ Er-Doped and Er-Implanted GaN Films Grown by Hydride Vapor Phase Epitaxy

Published online by Cambridge University Press:  10 February 2011

S. Kim ,
X. Li ,
J. J. Coleman ,
R. Zhang ,
D. M. Hansen ,
T. F. Kuech  and
S. G. Bishop
S. Kim
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
X. Li
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. J. Coleman
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
R. Zhang
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
D. M. Hansen
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI 53706
S. G. Bishop
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the 1540 nm 4I13/2 ← 4I15/2 emission of Er3+ in in situ Er-doped and Er-implanted GaN grown by hydride vapor phase epitaxy (HVPE). The PL and PLE of these two different Er-doped HVPE-grown GaN films are compared with Er-implanted GaN grown by metal organic chemical vapor deposition (MOCVD).

In the in situ Er-doped HVPE-grown GaN, the lineshape of the broad PLE absorption bands and the broad PL bands is similar to that in Er-doped glass. The PL spectra of this in situ Er-doped sample are independent of excitation wavelength, unlike the PL of the Er-implanted GaN. These PL spectra are quite different from the site-selective PL spectra observed in the Er-implanted GaN, indicating that the seven different Er sites existing in the Er-implanted MOCVD-grown GaN are not observed in the in situ Er-doped HVPE-grown GaN. Four of the seven different Er3+ sites observed in the Er-implanted MOCVD-grown GaN annealed at 900°C under a flow of N2 are present in the Er-implanted HVPE-grown GaN annealed at 800°C in an NH 3/H2 atmosphere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G11.4
Copyright
Copyright © Materials Research Society 1999

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References

1. Kim, S., Rhee, S. J., Turnbull, D. A., Reuter, E. E., Li, X., Coleman, J. J., and Bishop, S. G., Appl. Phys. Lett. 71, 231 (1997).Google Scholar
2. Kim, S., Rhee, S. J., Li, X., Coleman, J. J., and Bishop, S. G., Appl. Phys. Lett. 71, 2662 (1997).Google Scholar
3. Kim, S., Rhee, S. J., Li, X., Coleman, J. J., and Bishop, S. G., Mater. Res. Soc. Symp. Proc. 501, to be published (1998).Google Scholar
4. Kim, S., Rhee, S. J., Li, X., Coleman, J. J., and Bishop, S. G., J. Electron. Mater., 27, 246 (1998).Google Scholar
5. Thaik, M., Hommerich, U., Schwartz, R. N., Wilson, R. G., and Zavada, J. M., Appl. Phys. Lett. 70, 2641 (1997).Google Scholar
6. Wu, X., Hommerich, U., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Schwartz, R. N., Wilson, R. G., and Zavada, J. M., Appl. Phys. Lett. 70, 2126 (1996).Google Scholar
7. Hansen, D. M., Zhang, R., Perkins, N. R., Safvi, S., Zhang, L., Bray, K. L. and Kuech, T. F., Appl. Phys. Lett. 72, 1244 (1998).Google Scholar
8. Turnbull, D. A. and Bishop, S. G., J. Non-Cryst. Solids., 223, 105 (1998).Google Scholar
9. Mott, N. F. and Davis, E. A., Electronic Processes in Non-Crystalline Materials, (Clarendon Press, Oxford, 1979), p. 273.Google Scholar
10. Gan, F., Laser Materials, (World Scientific, New Jersey, 1995), p. 220.Google Scholar
11. Torvik, J. T.. Qui, C. H., Feuerstein, R. J., Pankove, J. I., Namavar, F., J. Appl. Phys. 81, 6343 (1997).Google Scholar