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Photoluminescence and Raman Spectroscopy of Cubic SiC Grown by Chemical Vapor Deposition on Si Substrates

Published online by Cambridge University Press:  28 February 2011

J.A. Freitas ,
S.G. Bishop ,
A. Addamiano ,
P.H. Klein ,
H.J. Kin  and
R. Davis
J.A. Freitas
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
S.G. Bishop
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
A. Addamiano
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
P.H. Klein
Affiliation:
Naval Research Laboratory, Washington, D.C. 20375
H.J. Kin
Affiliation:
North Carolina State University, Raleigh, NC 27695
R. Davis
Affiliation:
North Carolina State University, Raleigh, NC 27695
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Abstract

Thin films of cubic SiC were grown on Si substrates by a new CVD heteroepitaxial technique. The cubic polytype and crystal quality were verified by room temperature Raman spectroscopy. Low temperature photoluminescence (PL) studies detected nitrogen donor bound excitons, N-Al donor-acceptor pairs in Al-doped samples, and some defect complexes usually observed only in irradiated samples. Evidence of strain due to the Si-SiC lattice mismatch was observed in both the Raman and PL spectra and the effects of substrate removal and high temperature annealing on these optical spectra were studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 581
Copyright
Copyright © Materials Research Society 1985

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References

1. Nishino, S., Powell, J.A., and Will, H.A., Appl. Phys. Lett. 42, 460 (1983).CrossRefGoogle Scholar
2. Liaw, H.P. and Davis, R.F., J. Electrochem. Soc. 131, 3014 (1984).CrossRefGoogle Scholar
3. Addamiano, A. and Klein, P.H., J. Crystal Growth IQ, may 1985.Google Scholar
4. Lely, J.A., Ber. Deut. Keram. Ges. 32, 229 (1955).Google Scholar
5. Olego, D., Cardona, M., and Vogl, P., Phys. Rev. B 2, 3878 (1982).Google Scholar
6. Choyke, W.J., Hamilton, D.R., and Patrick, L., Phys.Rev. 131, A1163 (1964).Google Scholar
7. Choyke, W.J. and Patrick, L., Phys. Rev. Bj, 4959 (1970).Google Scholar
8. Dean, P.J., Choyke, W.J., and Patrick, L., J. of Luminescence 15, 299 (1977).CrossRefGoogle Scholar
9. Geiczy, I.I., Nesterov, A.A., and Smirnov, L.S., in Radiation Effects in Semiconductors, (Gordon and Breach, N.Y., 1971) p. 327.Google Scholar
10. Choyke, W.J. and Patrick, L., Phys. Rev. B A, 1843 (1971).CrossRefGoogle Scholar
11. Patrick, L. and Choyke, W.J., J. Phys. Chem. Solids 34, 565 (1973).CrossRefGoogle Scholar
12. Kaplan, R., Wagner, R. J., Kim, H.J., and Davis, R.F., Solid State Commun., in press.Google Scholar