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Photoluminescence Studies of a Quantum Well Modulated by Faceting on Gaas (110) Surfaces

Published online by Cambridge University Press:  15 February 2011

S. Tomiya ,
C. M. Reaves ,
M. Krishnamurthy ,
M. Wassermeier ,
D. Bimberg ,
P. M. Petroff  and
S. P. DenBaars
S. Tomiya
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106 Sony Corporation Research Center, 174 Fujitsuka, Hodogaya, Yokahama, 240 Japan.
C. M. Reaves
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106 QUEST -- NSF Center for Quantized Electronic Structures, University of California, Santa Barbara CA 93106
M. Krishnamurthy
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106
M. Wassermeier
Affiliation:
QUEST -- NSF Center for Quantized Electronic Structures, University of California, Santa Barbara CA 93106 paul Drude Institut, Hausvogterplatz 5-7, 0-1086 Berlin, Germany
D. Bimberg
Affiliation:
QUEST -- NSF Center for Quantized Electronic Structures, University of California, Santa Barbara CA 93106 Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, D-1000, Berlin 12, Germany
P. M. Petroff
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106 QUEST -- NSF Center for Quantized Electronic Structures, University of California, Santa Barbara CA 93106
S. P. DenBaars
Affiliation:
Materials Department, University of California, Santa Barbara CA 93106 QUEST -- NSF Center for Quantized Electronic Structures, University of California, Santa Barbara CA 93106
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Abstract

Step bunching during epitaxial growth results in the transformation of a vicinal surface into a periodic array of micro-facets. Molecular beam epitaxial growth on the vicinal GaAs (110) surface exhibits this phenomenon which has primarily been characterized by electron microscopy. GaAs quantum wells with AlAs barriers were grown on GaAs(110) substrates vicinal 0.5-2· towards [010]. The faceting on the vicinal surface creates two distinct quantum well thicknesses. While most of the quantum well is 96Å thick, it broadens at the faceted regions. This thickness modulation produces two distinct luminescence peaks. By using temperature dependent photoluminescence, we have observed trends in exciton mobility. The exciton mobility decreases at low temperatures for the 1.0° and 2.0° samples, indicating a scattering mechanism. We will discuss interface roughness and other sources of scattering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 312: Symposium P – Common Themes and Mechanisms of Epitaxial Growth , 1993 , 279
Copyright
Copyright © Materials Research Society 1993

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