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Photoluminescence Study of Defects in GaN Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  17 March 2011

Michael A. Reshchikov ,
Manhong H. Zhang ,
Jie Cui ,
Paolo Visconti ,
Feng Yun  and
Hadis Morkoç
Michael A. Reshchikov
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Manhong H. Zhang
Affiliation:
Also with Istituto per lo Studio di Nuovi Materiali per l' Elettronica, CNR, 73100 Lecce, Italy
Jie Cui
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Paolo Visconti
Affiliation:
Also with Istituto per lo Studio di Nuovi Materiali per l' Elettronica, CNR, 73100 Lecce, Italy
Feng Yun
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
Hadis Morkoç
Affiliation:
Virginia Commonwealth University, Richmond, VA 23284, U.S.A
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Abstract

Defect related photoluminescence (PL) in unintentionally doped GaN layers grown by molecular beam epitaxy (MBE) was studied. Under certain growth conditions, we observed new defect-related bands: a red band with a maximum at about 1.88 eV and a green band with a maximum at about 2.37 eV. The quenching of these bands with increasing temperature took place with an activation energy of about 120-140 meV at temperatures above 100 K. Moreover, the red band exhibited an increase of PL intensity with an activation energy of 1.2 meV in the range of 10-60 K. The observed behavior is explained by invoking a configuration coordinate model and that we speculate the defects to be partially nonradiative and related to Ga atoms.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.7
Copyright
Copyright © Materials Research Society 2001

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References

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