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Physical Properties of Annealed a-CSiGe:H Alloys

Published online by Cambridge University Press:  25 February 2011

F. Demichelis ,
G. Kaniadakis ,
C. F. Pirri ,
A. Tagliaferro  and
E. Tresso
F. Demichelis
Affiliation:
Dipartimento di Fisica - Politecnico di Torino Corso Duca degli Abruzzi 24 - 10129 Torino - Italy
G. Kaniadakis
Affiliation:
Dipartimento di Fisica - Politecnico di Torino Corso Duca degli Abruzzi 24 - 10129 Torino - Italy
C. F. Pirri
Affiliation:
Dipartimento di Fisica - Politecnico di Torino Corso Duca degli Abruzzi 24 - 10129 Torino - Italy
A. Tagliaferro
Affiliation:
Dipartimento di Fisica - Politecnico di Torino Corso Duca degli Abruzzi 24 - 10129 Torino - Italy
E. Tresso
Affiliation:
Dipartimento di Fisica - Politecnico di Torino Corso Duca degli Abruzzi 24 - 10129 Torino - Italy
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Abstract

The optoelectronic properties of the new semiconducting alloy a-CSiGe:H have been studied with particular regard to the dependence upon deposition and annealing temperature. Infrared and electrical results are interpreted in terms of hydrogen bonding.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 527
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E. and Rava, P. Proc. 3rd Int PVSEC, (Tokyo 1988) 313 Google Scholar
2. Demichelis, F., Kaniadakis, G., Tagliaferro, A., Tresso, E., Mea, G. Della and Paccagnella, A., Solid State Comm. (in press)Google Scholar
3. Demichelis, F., Kaniadakis, G., Tagliaferro, A. and Tresso, E., Appl. Opt. 26, 1737 (1987)Google Scholar
4. Catherine, J. and Turban, G., Thin Solid Films 70, 101 (1980)Google Scholar
5. Wieder, H., Cardona, M. and Guarnieri, C.R., Phs. Stat. Sol. (b) 92, 99 (1979)Google Scholar
6. Dischler, B., Sah, R.E., Koidl, P., Fluhr, W. and Vokann, A., Proc. 7-th Int. Symp. on Plasma Chemistry – Enidhoven, July 1985- Vol I - p.45 Google Scholar
7. Demichelis, F., Kaniadakis, G., Mezzetti, E., Mpawenayo, P., Tagliaferro, A. Tresso, E., Rava, P. and Mea, G.A. Della, Il Nuovo Cimento 90, 393 (1987)CrossRefGoogle Scholar
8. Huber, K.P., in AIP Handbook of Physics, ed. Gray, D.E. (Mc-raw-Hill, New York (1972), p. 7–168 Google Scholar
9. Beyer, W., Wagner, H. and Finger, F., J. of Non-Cryst. Solids 77&78, 857 (1985)CrossRefGoogle Scholar
10. Demichelis, F., Tagliaferro, A., Proc. of 2nd Symposium on Physics and Application of Amorphous Semiconductors (Torino 1988) (In press)Google Scholar