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Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

Published online by Cambridge University Press:  15 February 2011

B. Ea Kim ,
M.C. Hugon ,
F. Varniere ,
B. Agius ,
H. Achard  and
M. Puech
B. Ea Kim
Affiliation:
Université de Paris Sud, BP 127, 91403 OrsayCedexFrance
M.C. Hugon
Affiliation:
Université de Paris Sud, BP 127, 91403 OrsayCedexFrance
F. Varniere
Affiliation:
Université de Paris Sud, BP 127, 91403 OrsayCedexFrance
B. Agius
Affiliation:
Université de Paris Sud, BP 127, 91403 OrsayCedexFrance
H. Achard
Affiliation:
LETI département de Microélectronique 85X, 38041 GrenobleFrance.
M. Puech
Affiliation:
Alcatel SDG, PAE Les Glaisins, BP 69Annecy 74009Cedex, France.
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Abstract

Due to their high dielectric constant, good chemical stability and good insulating properties, lead zirconate titanate (PZT) thin films are considered as promising materials to replace Si3N4 and Ta2O5 for use as the capacitor dielectric in future high density DRAMs. Moreover, the ferroelectric quality of PZT films also allows use of this material in non volatile memories. In this paper, we investigate the properties of PZT films deposited from an oxide target of nominal composition {Pb1.1(Zr0.55,Ti0.45)O3} in a radio frequency (rf) magnetron sputtering system. The Pt(deposited at 450°C)/[TiN/Ti/BPSG/Si] structure annealed at 450°C at 10−6 mbar (Pt(450°C)/{TiN/Ti/BPSG/Si}450°c,10–6mbar) was used as a substrate material in this work. The PZT films were deposited at different pressures, and different substrate temperatures ranging from floating temperature to 400°C; the thicknesses of the sputtered films were in the 15–720 nm range. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative cation and oxygen compositions of the films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectrometry (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The conditions for the deposition of stoichiometric PZT thin films were established.

Electrical characterizations of the PZT films including resistivity, dielectric constant, dissipation factor were studied as a function of the temperature. From initial electrical measurements, it appears that a dielectric constant of 740 can be obtained for PZT 55/45 films deposited on a previously annealed Pt/TiN/Ti/BPSG/Si structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 361: Symposium I2 – Ferroelectric Thin Films IV , 1994 , 495
Copyright
Copyright © Materials Research Society 1995

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References

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