Hostname: page-component-848d4c4894-2pzkn Total loading time: 0 Render date: 2024-05-16T21:09:22.172Z Has data issue: false hasContentIssue false
  • English
  • Français

p-InGaN/n-GaN Heterojunction Diodes and their Application to Heterojunction Bipolar Transistors

Published online by Cambridge University Press:  17 March 2011

Toshiki Makimoto ,
Kazuhide Kumakura ,
Toshio Nishida  and
Naoki Kobayashi
Toshiki Makimoto
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Kazuhide Kumakura
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Toshio Nishida
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Naoki Kobayashi
Affiliation:
NTT Basic Research Laboratories 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
Get access

Abstract

p-InGaN/n-GaN heterojunction diodes were grown by metalorganic vapor phase epitaxy and characterized using current-voltage (I-V) and capacitance-voltage (C-V) measurements. We changed the In mole fraction in p-InGaN from 0 to 25% to investigate diode characteristics. All the diodes showed rectified I-V characteristics at room temperature. The ideality factors obtained from forward I-V characteristics were around 2, meaning that the recombination current is dominant instead of the tunneling current through the defects in depletion layers of the diodes. The breakdown voltage in reverse I-V characteristics depends on the net donor concentration (ND - NA) in n-GaN instead of the In mole fraction in p-InGaN. This result also means that the defects in p-InGaN do not influence the breakdown voltage. The built-in potential from C-V measurements decreases with the In mole fraction in p-InGaN, meaning that the valence band discontinuity increases with the In mole fraction. This valence band discontinuity realizes the hole confinement in an HBT with an p-InGaN base. Using these InGaN/GaN heterojunction diodes, an InGaN/GaN double heterojunction bipolar transistor was fabricated for the first time. The maximum current gain of 1.2 was obtained at room temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G13.10
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. McCarthy, L. S., Kozodoy, P., Denbaars, S. P., Rodwell, M., and Mishra, U. K., 25th International Symposium on Compound Semiconductors, We2A-1, Nara Japan (October 1998).Google Scholar
2. Ren, F., Abernathy, C. R., Hove, J. M. Van, Chow, P. P., Hickman, R., Klaasen, J. J., Kopf, R. F., Cho, H., Jung, K. B., Roche, J. R. La, Wilson, R. G., Han, J., Shul, R. J., Baca, A. G., and Pearton, S. J., MRS Internet J. Nitride Semicond. Res. 3, 41 (1998).Google Scholar
3. Limb, J. B., McCarthy, L., Kozodoy, P., Xing, H., Ibbetson, J., Smorchkova, Y., DenBaars, S. P., and Mishra, U. K., Electron. Lett. 35, 1671 (1999).Google Scholar
4. Kumakura, K., Makimoto, T., and Kobayashi, N., Jpn. J. Appl. Phys. 39, L337 (2000).Google Scholar
5. Kumakura, K., Makimoto, T., and Kobayashi, N., 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), Tu-P35, Sapporo Japan (June 2000). To be published in J. Cryst. Growth. Google Scholar
6. Makimoto, T., Kumakura, K., and Kobayashi, N., 10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X), Tu-P43, Sapporo Japan (June 2000). To be published in J. Cryst. Growth. Google Scholar
7. Jacob, G., Duseaux, M., Farges, J. P., Boom, M. M. B. Van Den, and Roksnoer, P. J., J. Cryst. Growth 61, 417(1983).Google Scholar
8. McGuigan, S., Thomas, R. N., Barrett, D. L., Hobgood, H. M., and Swanson, B. W., Appl. Phys. Lett. 48, 1377 (1986).Google Scholar
9. Makimoto, T., Kumakura, K., and Kobayashi, N., International Workshop on Nitride Semiconductors (IWN2000), PTE-45, Nagoya Japan (September 2000). To be published in Jpn. J. Appl. Phys. Google Scholar
10. Kumakura, K., Makimoto, T., and Kobayashi, N., International Workshop on Nitride Semiconductors (IWN2000), TA3-3, Nagoya Japan (September 2000). To be published in Jpn. J. Appl. Phys. Google Scholar