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Plasma Enhanced OMCVD Atomic Layered Growth of Y-BA-CU Oxide Films

Published online by Cambridge University Press:  16 February 2011

S. J. Duray ,
D. B. Buchholz ,
S. N. Song ,
D. S. Richeson ,
J. B. Ketterson ,
T. J. Marks  and
R. P. H. Chang
S. J. Duray
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
D. B. Buchholz
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
S. N. Song
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
D. S. Richeson
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
J. B. Ketterson
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
T. J. Marks
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
R. P. H. Chang
Affiliation:
NSF Science and Technology Center for Superconductivity and Materials Research Center, Northwestern University, Evanston, Illinois, 60208
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Abstract

We report the results of a pulsed organo-metallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10-4 -10-2 torr) and low substrate temperature (600 to 700 C) using organo-metallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organo-metallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films ([Tc (R=0)=90.5K] and Jc (77K, 50K gauss)=l.l×105 A/cm2) is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in-situ processing of multilayer structures (e.g. junctions).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 303
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Zhao., J. Dahman, H. K., March, H. O., Tonge, L. M., Marks, T. J., Wessels, B. W., and Kannewurf, C. R., Appl. Phys. Lett. 53, 1750 (1988).CrossRefGoogle Scholar
2. Li, Y. Q., Zhao, J., Chern, C. S., Huang, W., Kulesha, G. A., Lu, P., Gallois, B., Norris, P., Kear, B., and Cosandey, F., Appl. Phys. Lett. 58 648 (1991).CrossRefGoogle Scholar
3. Carlson, D. J., Siegal, M. P., Phillips, J. M., Tiefel, T.H., and Marshall, J. H., J. Mater. Res., Vol.5, 2797 (1990).CrossRefGoogle Scholar
4. Chew, N. G., Goodyear, S. W., Edwards, J. A., Satchell, J. S., Blenkinsop, S. E., and Humphreys, R. G., Appl. Phys. Lett. 57 2016 (1990).CrossRefGoogle Scholar
5. Yoshitake, T., Miura, S., Fujita, J., Shohata, N., Igarashi, H., Satoh, T., Sekiguichi, A., and Katoh, K., Appl. Phys. Lett. 56 575 (1990).CrossRefGoogle Scholar
6. Yamamoto, K., Lairson, B. M., Eom, C. B., Hammond, R. H., Bravman, J. C., and Geballe, T. H., Appl. Phys. Lett. 57 1936 (1990).CrossRefGoogle Scholar
7. Malandrino, G., Richeson, D.S., Marks, T.J., DeGroot, D.C., Schindler, J.L., Kannewurf, C.R., Appl. Phys. Lett. 58 182 (1991).CrossRefGoogle Scholar
8. Chern, C. S., Zhao, J., Li, Y. Q., Norris, P., Kear, B., Gallois, B. and Kalman, Z., Appl. Phys. Lett. 58 185 (1990).CrossRefGoogle Scholar
9. Venkatesan, T., Inam, A., Dutta, B., Ramesh, R., Hegde, M. S., Wu, X.D., Nazar, L., Chang, C.C., Barner, J. B., Hwang, D. M., and Rogers, C. T., Appl. Phys. Lett. 56 391 (1990).CrossRefGoogle Scholar
10. Inam, A., Wu, X.D., Nazar, L., Hegde, M.S., Rogers, C.T., Venkatesan, T., Simon, R. W., Daly, K., Padamsee, H., Kirchgessner, J., Moffat, D., Rubin, D., Shu, Q.S., Kalokitis, D., Fathy, A., Pendrick, V., Bjrown, R., Brycki, B., Belohoubek, E., Drabeck, L., Gruner, G., Hammond, R., Gamble, F., Lairson, B. M., and Bravman, J.C., Appl. Phys. Lett. 56 1178 (1990).CrossRefGoogle Scholar