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Plasma-Enhanced Chemical Vapor Deposition of High Quality Cubic BN Films with an Intermediate Layer of Turbostratic BN Thinner than 3 nm

Published online by Cambridge University Press:  11 February 2011

Hangsheng Yang ,
Chihiro Iwamoto  and
Toyonobu Yoshida
Hangsheng Yang
Affiliation:
Department of Materials Engineering, School of Engineering, The University of Tokyo, Hongo, 7–3–1, Bunkyo-ku, Tokyo 113–8656, Japan.
Chihiro Iwamoto
Affiliation:
Engineering Research Institute, School of Engineering, The University of Tokyo, Yayoi, 2–11–16, Bunkyo-ku, Tokyo 113–8656, Japan.
Toyonobu Yoshida
Affiliation:
Department of Materials Engineering, School of Engineering, The University of Tokyo, Hongo, 7–3–1, Bunkyo-ku, Tokyo 113–8656, Japan.
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Abstract

Cubic boron nitride (cBN) thin films were deposited on silicon wafers by low-pressure inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD). By using special substrate pre-treatment processes including positive biasing treatment in H2 plasma or 1200 K pre-heating in H2 atmosphere followed by an N2 plasma treatment, turbostratic BN (tBN) intermediate layer was revealed to directly grow on Si substrates without an initial amorphous layer. The thickness of the tBN transition layer can be reduced to less than 3 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 750: Symposium Y – Surface Engineering 2002–Synthesis, Characterization and Applications , 2002 , Y5.10
Copyright
Copyright © Materials Research Society 2003

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References

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