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Plasma-Enhanced MOCVD of Superconducting Oxides

Published online by Cambridge University Press:  15 February 2011

Kenji Ebihara
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami, Kumamoto 860, Japan
Tomoyuki Fujishima
Affiliation:
Department of Electrical Engineering and Computer Science, Kumamoto University, Kurokami, Kumamoto 860, Japan
Masanobu Shiga
Affiliation:
Dojindo Laboratories, Kumamoto Techno Research Park, Kumamoto 861-23, Japan
Quanxi Jia
Affiliation:
Department of Electrical and Computer Engineering, State University of New York at Buffalo, Bonner Hall, Amherst, New York 14260
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Abstract

The plasma-enhanced MOCVD is developed to prepare high-Tc oxide superconducting thin films. Plasmas generated by microwave and rf discharges decompose effectively the source materials ( β-diketonate chelates) into their elements and oxides. YBaCuO thin films were deposited on the MgO substrate of 500–650 °C at total pressure of 0.6–5 Torr with O2 contents less than 30%. The as-grown films produced by two kinds of plasma enhancement were porous and consisted of crystalline grains, but showed the superconducting transition after heating procedure at around 800 °C. It is shown that the inherent crystalline orientations of the as-grown films determine the crystal structure of the post-annealed films. The film of the metal atomic ratios of 0.91 for Ba/Y and 2.64 for Cu/Y showed the superconducting properties with Tc(zero) of 89 K and the critical current density (at 77 K) of 5×104 A/cm2. Spectroscopic analysis showed that the plasmas are composed of many excited species such as Y, Y+, Ba, Ba+, Cu, YO, BaO, CuO. Formation of the metal-oxides through the gas phase reaction is essential for the high-quality YBaCuO superconducting thin film preparation in the PEMOCVD.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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