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P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

Published online by Cambridge University Press:  01 February 2011

Y. L. Huang ,
E. Simoen ,
R. Job ,
C. Claeys ,
W. Düngen ,
Y. Ma ,
W. R. Fahrner ,
J. Versluys  and
P. Clauws
Y. L. Huang
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
E. Simoen
Affiliation:
IMEC, B-3001 Leuven, Belgium
R. Job
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
C. Claeys
Affiliation:
IMEC, B-3001 Leuven, Belgium Department of Electrical Engineering, Katholieke Universiteit Leuven, B-3001 Leuven, Belgium
W. Düngen
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
Y. Ma
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
W. R. Fahrner
Affiliation:
University of Hagen, Department of Electrical Engineering and Information Technology, D-58084 Hagen, Germany
J. Versluys
Affiliation:
Department of Solid-state Science, Ghent University, B-9000 Gent, Belgium
P. Clauws
Affiliation:
Department of Solid-state Science, Ghent University, B-9000 Gent, Belgium
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Abstract

A rather large amount of shallow donors is created in p-type Czochralski silicon (Cz Si) wafers after a hydrogen plasma exposure at ∼270 °C (substrate temperature) and a subsequent annealing in the temperature range of 350-450 °C. This two-step process has been used for the fabrication p-n junction diodes at low temperatures. Current-voltage characteristics show that the breakdown voltages of these diodes are higher than 100 V. The diode leakage is found to be improved after slow ramp annealing at temperatures up to 250 °C. Deep level transient spectroscopy measurements reveal that the oxygen related thermal donor is not the dominant doping species as expected before.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.26
Copyright
Copyright © Materials Research Society 2005

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