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Possibility of Quasi-Single-Crystalline Semiconductor Films

Published online by Cambridge University Press:  15 February 2011

T. Noguchi ,
S. Usui ,
D. P. Gosain  and
Y. Ikeda
T. Noguchi
Affiliation:
Frontier Science Laboratories
S. Usui
Affiliation:
Frontier Science Laboratories
D. P. Gosain
Affiliation:
Frontier Science Laboratories
Y. Ikeda
Affiliation:
Frontier Science LaboratoriesPersonal AV Company, Sony Corporation 2-1-1, Shinsakuragaoka, Hodogaya-ku, Yokohama-shi, 240-0036, Japan, noguchit@src.sony.co.jp
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Abstract

The existence of a novel tetrahedral semiconductor Quasi-Single-Crystalline (QSC) phase is posited. In the QSC semiconductor phase, the films consist of grains with a diamond structure of tetrahedral elements, such as Si, Ge and C, and the grains have a preferred orientation, such as <111> or <100> normal to the film. The lattices perpendicular to the grain boundaries are quasi-matched with neighboring grains. The grains in the films form a regular array, and are distributed more uniformly than in conventional poly-crystalline semiconductor films. Because of the small-angle grain boundaries, a tetrahedral QSC semiconductor such as QSC Si films are expected to have extremely low energy barriers at the grain boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 557: Symposium A – Amorphous and Heterogeneous Silicon Thin Films—Fundamentals to Devices—1999 , 1999 , 213
Copyright
Copyright © Materials Research Society 1999

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