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Preferred Orientations for Sol-Gel Derived Plzt Thin Layers

Published online by Cambridge University Press:  21 February 2011

Toshihiko Tani ,
Zhengkui Xu  and
David A. Payne
Toshihiko Tani
Affiliation:
Department of Materials Science and Engineering, Matmeials Research Laboratory and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801
Zhengkui Xu
Affiliation:
Department of Materials Science and Engineering, Matmeials Research Laboratory and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801
David A. Payne
Affiliation:
Department of Materials Science and Engineering, Matmeials Research Laboratory and Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

PLZT thin layers were deposited onto various substrates by sol-gel methods, and crystallized under different conditions and substrate treatments. Relationships are given for the chemical characteristics of the substrate's surface and the preferred orientations which develop on heat treatment. A preferred (111) orientation always developed for perovskite crystallized on Pt layers which contained Ti on the surface. This was attributed to the formation of Pt3Ti and the role of heteroepitaxial nucleation and growth sites. In addition, a preferred (100) orientation was also obtained on unannealed Pt/Ti/SiO2/Si substrates which were free of Ti on the surface. This was attributed to self-textured growth with flat faces striving for minimum surface energy conditions. The results are discussed in terms of the importance of interfacial chemistry on the control of texture for crystallization of PLZT thin layers on coated substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 269
Copyright
Copyright © Materials Research Society 1993

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References

1 Iijima, K., Tomita, Y. and Takayama, R. and Ueda, I., J. Appl. Phys., 60, 361 (1986)CrossRefGoogle Scholar
2 Adachi, M., Matsuzaki, T., Yamada, T., Shiosaki, T. and Kawabata, A., Jpn. J. Appl. Phys., 26, 550 (1987)CrossRefGoogle Scholar
3 Chen, C., Ryder, D. F. Jr., and Spurgeon, W. A., J. Am. Ceram. Soc., 72, 1495 (1989)CrossRefGoogle Scholar
4 Wang, Y., Zhang, P., Qu, B. and Zhong, W., J. Appl. Phys., 71, 6121 (1992)Google Scholar
5 Okuwada, K., Nakamura, S., Imai, M. and Kakuno, K., Jpn. J. Appl. Phys., 30, L1052 (1991)CrossRefGoogle Scholar
6 Okuwada, K., Imai, M. and Kakuno, K., Jpn. J. Appl. Phys., 28, L1271 (1989)CrossRefGoogle Scholar
7 Hirano, S., Yogo, T., Kikuta, K., Araki, Y., Saito, M. and Ogasahara, S., J. Am. Ceram. Soc., 75, 2785 (1992)CrossRefGoogle Scholar
8 Spierings, G. A. C. M., Zon, J. B. A. van, Klee, M. and Larsen, P. K., Proceedings of the 4th International Symposium on Integrated Ferroelectrics, 280 (1993)Google Scholar
9 Budd, K. D., Dey, S. K. and Payne, D. A., Brit. Ceram. Soc. Proc., 36, 107 (1985)Google Scholar
10 Bruchhaus, R., Pitzer, D., Eibl, O., Scheithauer, U. and Hoesler, W., Mat. Res. Soc. Symp. Proc., 243, 123 (1992)Google Scholar
11 Olowolafe, J. O., Jones, R. E., Campbell, A. C., Maniar, P. D., Hegde, R. I. and Mogab, C. J., Mat. Res. Soc. Symp. Proc., 243, 355 (1992)Google Scholar
12 Tuttle, B. A., Schwartz, R. W., Doughty, D. H. and Voigt, J. A., Mat. Res. Soc. Symp. Proc., 200, 159 (1990)CrossRefGoogle Scholar
13 Ickert, L. and Schneider, H. G., “Growth of Monocrystalline Layers”, in Advances in Epitaxy and Endotaxy, edited by Schneider, H. G., Ruth, V. and Kormdny, T., Elsevier (1990)Google Scholar
14 Goto, S., Fujimura, N., Nishimura, T. and Ito, T., J. Crystal Growth, 115, 816 (1991)Google Scholar
15 Hartman, P., “Structure and Morphology”, in Crystal Growth, edited by Hartman, P., North-Holland Publishing, Amsterdam (1973)Google Scholar
16 Wu, A. Y., Hwang, D. M. and Wang, L. M., Proceedings of 8th International Symposium on Applications of Ferroelectrics, 301 (1992)Google Scholar
17 Kushida, K. and Takeuchi, H., Ferroelectrics, 108, 3 (1990)CrossRefGoogle Scholar
18 Fujimura, N., Kakinoki, M. and Ito, T., Mat. Res. Soc. Symp. Proc., 243 (1992) 545 CrossRefGoogle Scholar