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Preparation and Electronic Device Properties of Single Crystalline La2−xSrxCuO4Superconducting Film

Published online by Cambridge University Press:  18 March 2011

A. T. M. Nazmul Islam ,
K. Ashizawa ,
S. Watauchi  and
I. Tanaka
A. T. M. Nazmul Islam
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7 Kofu 400–8511, Japan
K. Ashizawa
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7 Kofu 400–8511, Japan
S. Watauchi
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7 Kofu 400–8511, Japan
I. Tanaka
Affiliation:
Institute of Inorganic Synthesis, Yamanashi University, Miyamae 7 Kofu 400–8511, Japan
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Abstract

We have grown La2−xSrxCuO4 single-crystalline films on atetra-axis oriented Zn doped La2CuO4 single crystals by IR-LPE technique. The films show thickness dependence of Tc,onset, but films of thickness below 80μm doesn't show zero resistance down to 4.2K. The I-V characteristics showed reduced voltage jump than usual and small hysteresis. This phenomenon resembles with the characteristics of resistively and capacitively shunted intrinsic Josephson junctions (RCSJ)

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 689: Symposium E – Materials for High-Temperature Superconductor Technologies , 2001 , E5.23
Copyright
Copyright © Materials Research Society 2002

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References

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