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Preparation and Residual Stress Characterisation of Polycrystalline Silicon Germanium Films Grown by Atmospheric Pressure Chemical Vapour Deposition

Published online by Cambridge University Press:  10 February 2011

P. Fiorini ,
S. Sedky ,
M. Caymax  and
C. Baert
P. Fiorini
Affiliation:
IMEC - Kapeldreef 75, B-3001 Leuven (Belgium), Fiorini@imec.be
S. Sedky
Affiliation:
IMEC - Kapeldreef 75, B-3001 Leuven (Belgium), Fiorini@imec.be
M. Caymax
Affiliation:
IMEC - Kapeldreef 75, B-3001 Leuven (Belgium), Fiorini@imec.be
C. Baert
Affiliation:
IMEC - Kapeldreef 75, B-3001 Leuven (Belgium), Fiorini@imec.be
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Abstract

Polycrystalline silicon-germanium alloys (poly-SiGe) are deposited by chemical vapour deposition at atmospheric and reduced pressure. The stress, as well as its profile along the growth direction, are measured. Depending on the deposition pressure the stress can be compressive or tensile, the profile of the stress is in both cases rather uniform. The behaviour of the stress as a function of annealing temperature is also investigated. Films which are compressive as grown can be made tensile by annealing, films which are tensile as grown remains tensile even after high temperature annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 472: Symposium I – Polycrystalline Thin Films - Structure, Texture, Properties..III , 1997 , 227
Copyright
Copyright © Materials Research Society 1997

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References

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