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Preparation of Ba1−xSrxTiO3 Thin Films by Metalorganic Chemical Vapor Deposition and Their Properties

  • S. R. Gilbert (a1), B. W. Wessels (a1), D. A. Neumayer (a2), T. J. Marks (a2), J. L. Schindler (a3) and C. R. Kannewurf (a3)...
Abstract

Ba1−xSrxTiO3 thin films were deposited over the entire solid solution range by low pressure metal-organic chemical vapor deposition. The metal-organic precursors employed were titanium tetraisopropoxide and barium and strontium(hexafl uoroacetylacetonate)2·tetraglyme. The substrates used were LaAlO3 and (100) p-type Si. Ba1−xSrxTiO3 films deposited on LaAlO3 were epitaxial, while the films deposited on Si showed no texture. Auger spectroscopy indicated that single phase Ba1−xSrxTiO3 films did not contain detectable levels of fluorine contamination. The dielectric constant was found to depend upon the solid solution composition x, and values as large as 220 measured at a frequency of 1 MHz were obtained. The resistivities of the as-deposited films ranged from 103 to 108 Ω-cm. Temperature dependent resistivity measurements indicated the films were slightly oxygen deficient.

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