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Preparation of Oriented GaAs Bicrystal Layers by Vapor-Phase Epitaxy Using Lateral Overgrowth

Published online by Cambridge University Press:  15 February 2011

Jack P. Salerno ,
R. W. Mcclelland ,
P. Vohl ,
John C. C. Fan ,
W. Macropoulos ,
C. O. Bozler  and
A. F. Witt
Jack P. Salerno
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
R. W. Mcclelland
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
P. Vohl
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
John C. C. Fan
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
W. Macropoulos
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
C. O. Bozler
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
A. F. Witt
Affiliation:
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139
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Abstract

This paper describes a novel technique that utilizes vapor-phase epitaxy to grow bicrystal semiconductor layers with predetermined rotation axis, misorientation angle, and grain boundary plane. The geometrical structure of the grain boundary in each layer is therefore completely specified. The technique has been demonstrated by using the AsCl3-GaAs-H2 method to grow a series of GaAs bicrystals, each containing a [110] tilt boundary formed by a grain with a (111)B boundary plane and a grain rotated from (111)B by a selected misorientation angle. The results of initial electrical measurements indicate that the height of the potential barrier associated with each grain boundary varies with the misorientation angle.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981 , 77
Copyright
Copyright © Materials Research Society 1982

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References

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