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Preparation of α-(Si.Ge):H Alloys by D.C. Glow Discharge Deposition

Published online by Cambridge University Press:  28 February 2011

D. Slobodin ,
S. Aljishi ,
R. Schwarz  and
S. Wagner
D. Slobodin
Affiliation:
Department of Electrical Engineering and Computer Science Princeton University, Princeton, NJ 08544
S. Aljishi
Affiliation:
Department of Electrical Engineering and Computer Science Princeton University, Princeton, NJ 08544
R. Schwarz
Affiliation:
Department of Electrical Engineering and Computer Science Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering and Computer Science Princeton University, Princeton, NJ 08544
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Abstract

We report the preparation of α-(Si.Ge):H alloy films by decomposition of SiF4, GeF4, and H2 in a d.c. glow discharge. Germanium is incorporated very efficiently from GeF4. The germanium content and optical gap canbe controlled by varying the GeF4 flow while keeping the SiF4 and H2 flows constant. The films, all prepared at 300 ºC substrate temperature, exhibit high photo- to dark-conductivity ratios for compositions of up to -25% germanium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 49: Symposium F – Materials Issues in Applications of Amorphous Silicon Technology , 1985 , 153
Copyright
Copyright © Materials Research Society 1985

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References

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