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Preparation Of Silicon Carbide Nanofibrils From Vapor Grown Carbon Nanotubes

Published online by Cambridge University Press:  10 February 2011

Chunming Niu  and
David Moy
Chunming Niu
Affiliation:
Hyperion Catalysis Int'l, 38 Smith Place, Cambridge, MA 02138
David Moy
Affiliation:
Hyperion Catalysis Int'l, 38 Smith Place, Cambridge, MA 02138
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Abstract

SiC nanofibrils are of interest for their potential applications, particularly for the development of nanostructured ceramic (or metal) matrix composites. Methods of production of SiC nanofibrils in bulk quantity are essential for realization of these applications. We have prepared SiC nanofibrils with average diameters of 15 nm by direct reaction of carbon nanotubes with vapor phase SiO. The carbon nanotubes were prepared catalytically by decomposition of hydrocarbons in our commercial process; they are characterized by having uniform diameter of ∼10 nm and multiple graphitic carbon layers arranged concentrically around the tube axis. Total conversion of the carbon nanotubes to SiC nanofibrils was easily achieved; the resulting SiC nanofibrils were highly crystallized β-SiC, essentially free of SiC particles. The reaction between carbon nanotubes and SiO vapor was a pseudo-topotactic transformation since the macroscopic textures of the starting carbon nanotubes remained almost unchanged in the product. This synthetic approach utilizes high quality carbon nanotubes of high uniformity which are available on a commercial scale; thus applications of SiC nanofibrils in matrix composites on a commercial scale can be envisioned.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 410: Symposium S – Covalent Ceramics III-Science and Technology of Non-Oxides , 1995 , 179
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1. Whitesides, G., Mathias, J. P., and Seto, C. T., Science, 252, 1312(1991).Google Scholar
2. Gleiter, H., Adv. Mater., 7/8, 474(1992).Google Scholar
3. Wakai, F., Kodama, Y., Sakaguchi, S., Murayama, N., Izaki, K., Niihara, K., Nature, 344, 421(1990).Google Scholar
4. Sham, T. K., Jiang, D. T., Coulthard, I., Lorimer, J. W., Feng, X. H., Tan, K. H., Frigo, S. P., Roserberg, R. A., Houghton, D. C., and Bryskiewicz, B., Nature, 363, 331(1993).Google Scholar
5. Dag, O., Kuperman, A., and Ozin, G. A., Adv. Mater., 7(1), 72(1995).Google Scholar
6. Tennent, H., et al, US Patents 4,663,230(1987); 5, 165, 909(1992).Google Scholar
7. Iijima, S., Nature, 354, 56(1991).Google Scholar
8. Farriss, C. W. II, Kelly, F. N., and Von Meetwall, E., J. Applied Polymer Science, 55, 935(1995).Google Scholar
9. Niu, C-M., and Moy, D., in Applications of Diamond and Related materials: Third International Conference, edited by Feldman, A., et al (NIST Special Publication 885), p 893.Google Scholar
10. Zhou, D., and Seraphin, S., Chem. Phys. Lett., 222, 233(1994).Google Scholar
11. Dai, H-J., Wong, E. W., Lu, Y-Z., Fan, S-S., and Lieber, C. M., Nature, 375, 769(1995).Google Scholar
12. Benaissa, M., Werckmann, J., and Ehret, G., J. Mater. Sci., 29, 4700(1994).Google Scholar
13. Benaissa, M., Werckmann, J., Hutchison, J. L., Peschiera, E., Guille, J., and Ledoux, M. J., J. Crystal Growth, 131, 5(1993).Google Scholar
14. Urretavizcaya, G., and Lopez, J. M. Porto, J. Mater. Res., 9(11), 2981(1994).Google Scholar
15. Bootsma, G. A., Knipenberg, W. F., and Verspui, G., J. Cryst. Growth, 11, 297(1971).Google Scholar