Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-27T05:29:08.281Z Has data issue: false hasContentIssue false
  • English
  • Français

The Problem of Doping Wide Gap II-VI Compound Semiconductors and Its Solutions

Published online by Cambridge University Press:  21 February 2011

W. I. Wang
W. I. Wang*
Affiliation:
Department of Electrical Engineering Columbia University, New York, NY 10027
Get access

Abstract

Wide gap II-VI compound semiconductors are difficult to be doped amphoterically. After more than thirty years of research in II-VI compound semiconductors, there does not even exist a satisfatory simultaneous explanation as to why ZnSe can be easily doped n-type while undoped ZnTe only exhibits p-type conductivity. In this paper we propose an explanation based on the III-V/II-VI analogy which for the first time can explain these phenomena, and provide solutions to the problem of doping II-VI compound semiconductors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 228: Symposium N – Materials for Optical Information Processing , 1991 , 319
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Park, Y.S. and Shin, B.K., “Recent advances in injection luminescence in II-VI compounds”, pp. 135–167, in ELECTROLUMINESCENCE edited by Panlove, J.I., Springer-Verlag, New York, 1976.Google Scholar
[2] Marfaing, Y., Prog. Crystal Growth Charact. 4, 317 (1981).Google Scholar
[3] Mandel, G., Phys. Rev. 134 A1073 (1964).Google Scholar
[4] DePuydt, J.M., Cheng, H., Potts, J.E., Smith, T.L., and Mohapatra, S.K., J. Appl. Phys. 62, 4756 (1987).Google Scholar
[5] Cheng, H., DePuydt, J.M., Potts, J.E., and Haase, M.A., J. Crystal Growth 95, 512 (1989).Google Scholar
[6] Shazad, K., Olego, D., Cammack, D., Phys. Rev. B, 39 13016 (1989).CrossRefGoogle Scholar
[7] Wang, W.I., Marks, R.F., and Vina, L., J. Appl. Phys. L 2, 937 (1986).Google Scholar
[8] Effer, D. and Etter, P.J., J. Phys. Chem. Solids 25, 451 (1964).Google Scholar
[9] Haase, M.A., Cheng, H., DePuydt, J.M., and Potts, J.E., J. Appl. Phys. 67, 448 (1990).Google Scholar
[10] Ren, J., Bowers, K.A., Sneed, B., Dreifus, D.L., Cook, J.W. Jr., Schetzina, J., and Kolbas, R.M., Appl. Phys. Lett. 57, 1901 (1990).Google Scholar
[11] Taike, A., Migita, M., and Yamamoto, H., Appl. Phys. Lett. 56, 1989 (1990).Google Scholar
[12] Wang, W.I., Mendez, E.E., Kuan, T.S., and Esaki, L., Appl. Phys. Lett. 47, 826 (1985).CrossRefGoogle Scholar
[13] Vina, L. and Wang, W.I., Appl. Phys. Lett. 48. 6 (1986).Google Scholar
[14] Cho, A.Y., J. Appl. Phys. 41, 2780 (1970).Google Scholar
[15] Wang, W.I., Mendez, E.E., Iye, Y., Kim, M.H., Bose, S.S., and Stillman, G.E., J. Appl. Phys. 60, 8134 (1986).Google Scholar