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Process Windows of Nickel and Platinum Silicides in Deep Sub-Micron Regime

Published online by Cambridge University Press:  15 February 2011

D.-X. Xu ,
S. R. Das ,
J. P. McCaffrey ,
C. J. Peters  and
L. E. Erickson
D.-X. Xu
Affiliation:
Institute For Microstructural Sciences, National Research Council, M-50, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
S. R. Das
Affiliation:
Institute For Microstructural Sciences, National Research Council, M-50, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
J. P. McCaffrey
Affiliation:
Institute For Microstructural Sciences, National Research Council, M-50, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
C. J. Peters
Affiliation:
Institute For Microstructural Sciences, National Research Council, M-50, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
L. E. Erickson
Affiliation:
Institute For Microstructural Sciences, National Research Council, M-50, Montreal Road, Ottawa, Ontario K1A 0R6, Canada
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Abstract

It has been observed that the sheet resistance of a Ti-salicided polysilicon-gate electrode or source/drain region increases significantly as the dimension reaches the lower sub-micron range. The resistance of platinum and nickel silicide (PtSi and NiSi), however, does not increase with reduced linewidth. We have studied PtSi and NiSi films with deep sub-micron linewidths on single crystal or poly-Si substrates. In this study, the material properties such as sheet resistance, grain structure and surface morphology of these silicide films in confined geometries are reviewed and compared with TiSi2. Process windows for forming and maintaining these silicides are explored.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 59
Copyright
Copyright © Materials Research Society 1996

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References

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