Hostname: page-component-848d4c4894-p2v8j Total loading time: 0.001 Render date: 2024-05-16T11:29:52.147Z Has data issue: false hasContentIssue false
  • English
  • Français

A Projection-Type Excimer-Laser Crystallization System For Ultra-Large Grain Growth Of Si Thin-Films

Published online by Cambridge University Press:  10 February 2011

Chang-Ho Oh ,
Mitsuru Nakata  and
Masakiyo Matsumura
Chang-Ho Oh
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail:och@silicon.pe.titech.ac.jp, URL:http://silicon.pe.titech.ac.jp
Mitsuru Nakata
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail:och@silicon.pe.titech.ac.jp, URL:http://silicon.pe.titech.ac.jp
Masakiyo Matsumura
Affiliation:
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 0-okayama, Meguro-ku, Tokyo 152-8550, Japan, E-mail:och@silicon.pe.titech.ac.jp, URL:http://silicon.pe.titech.ac.jp
Get access

Abstract

We have proposed a new excimer-laser crystallization system based on an optical projection concept. In the proposed system, a collimated excimer-laser light pulse is irradiated to Si thin-films on a glassy substrate, through a phase-shift mask and an optical lens system. Using oneand two-dimensional phase-shift masks, we have examined feasibility of the proposed method.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 187
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Matsumura, M., Phys. Stat. Sol. (a) 166, p. 715 (1998)Google Scholar
2. Ishihara, R. and Matsumura, M., Jpn. J. Appl. Phys., 36, p. 6167 (1997)Google Scholar
3. Crowder, M. A., Carey, P. G., Smith, P. M., Sposili, R. S., Cho, H. S., and Im, J. S., IEEE ED. Lett., 19 (8), p. 306 (1998)Google Scholar
4. Ishikawa, K., Ozawa, M., Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. 731 (1998)Google Scholar
5. Oh, C. H., Ozawa, M. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. L492 (1998)Google Scholar
6. Oh, C. H. and Matsumura, M., Jpn. J. Appl. Phys., 37, p. 5474 (1998)Google Scholar
7. Matsumura, M. and Oh, C. H., Thin Solid Films, 337, p. 123 (1999)Google Scholar
8. Shimizu, K., Sugiura, O. and Matsumura, M., IEEE Trans. ED., 40, p. 112 (1993)Google Scholar
9. Ishihara, R. and Matsumura, M., Jpn. J. Appl. Phys., 34, p. 3976 (1995)Google Scholar