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Properties and Crystallization of Amorphous Si1-xPx Alloy Thin Films

Published online by Cambridge University Press:  15 February 2011

J. R. A. Carisson ,
X.-H. Li ,
L. D. Madsen  and
H. T. G. Hentzell
J. R. A. Carisson
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden
X.-H. Li*
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden
L. D. Madsen
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden
H. T. G. Hentzell
Affiliation:
Thin Film Division, Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden
*
* Currently at: TMM, ABB STAL AB, S-612 82 FinspÅng, Sweden.
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Abstract

The properties of amorphous Si1-xPx alloy thin films with 20–44 at.% P were studied. The results showed that these alloys have a wide bandgap Eo ranging from 1.5 to 2.15 eV, where the alloy films with 20 at.% P have the widest bandgap (1.75–1.82 eV) at annealing temperatures ≤600 °C. Conductivity measurements showed that two electron conduction processes mainly exist: hopping conduction in the band tail at low temperatures and extended-state conduction in the conduction band at high temperatures. Crystallization studies showed that the alloys are thermally stable and crystallize at temperatures between 850 and 1100 °C. A new phosphide, Si7P3 was formed by annealing the alloys with 30–44 at.% P at temperatures ≥950 °C depending on the P concentration.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 377: Symposium A – Amorphous Silicon Technology 1995 , 1995 , 535
Copyright
Copyright © Materials Research Society 1995

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References

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