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Properties of Catalytic CVD SiNx For Antireflection Coatings

Published online by Cambridge University Press:  10 February 2011

A. Izumi  and
H. Matsumura
A. Izumi
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
H. Matsumura
Affiliation:
JAIST (Japan Advanced Institute of Science and Technology) Ishikawa 923-1292, JAPAN, a-izumi@jaist.ac.jp
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Abstract

We propose a novel preparation of high quality silicon nitride (SiNx) films by catalytic chemical vapor deposition (Cat-CVD) method for the application of antireflection coatings. It is found that the refractive index (n) of the Cat-CVD SiNx films are controlled from 2.0 to 2.5 by varying the flow ratio of SiH4 and NH3. The properties of the SiNx (n = 2.0) are investigated, and it is found that, 1) the 16-BHF etching rate of the Cat-CVD SiNx film is only 23 A/min, and the film shows excellent moisture resistance, 2) the Cat-CVD SiNx film shows good insulating properties, and the breakdown electric field is higher than 9 MV/cm and the interface state density is 5.6x 1011 cm2eV-1, 3) the step coverage of the film is very conformal.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 555: Symposium OO – Properties and Processing of Vapor-Deposited Coatings , 1998 , 161
Copyright
Copyright © Materials Research Society 1999

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References

1. Liao, W.-S. and Lee, S.-C, J. Electrochem. Soc. 144, 1477 (1997).Google Scholar
2. Matsumura, H., Jpn. J. Appl. Phys. 37, 3175 (1998).Google Scholar
3. Okada, S. and Matsumura, H., Jpn. J. Appl. Phys. 36, 7035 (1997).Google Scholar
4. Hattori, R., Nakamura, G., Nomura, S., Ichise, T., Masuda, A. and Matsumura, H., Technical digest of IEEE Gallium Arsenide Integrated Circuits Symp., Anaheim, USA, Oct., p. 78 (1997).Google Scholar
5. Izumi, A. and Matsumura, H., Appl. Phys. Lett. 71, 1371 (1997).Google Scholar
6. Izumi, A., Masuda, A., Okada, S. and Matsumura, H., Inst. Phys. Conf. Ser. 155, 343 (1997).Google Scholar
7. Izumi, A., Masuda, A. and H. Matsumura (unpublished).Google Scholar
8. Kern, W. and Poutinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar
9. Terman, L. M., Solid Stat. Electron. 5, 282 (1962).Google Scholar