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Properties of Heteroepitaxial 3C-SiC Layer on Si Using Si2(CH3)6 by CVD

Published online by Cambridge University Press:  10 February 2011

Y. Chen ,
Y. Masuda ,
Y. Nishlo ,
K. Matsumoto  and
S. Nishino
Y. Chen
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606, Japan
Y. Masuda
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606, Japan
Y. Nishlo
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606, Japan
K. Matsumoto
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606, Japan
S. Nishino
Affiliation:
Department of Electronics and Information Science, Faculty of Engineering and Design, Kyoto Institute of Technology, Matsugasaki, Sakyo-ku, Kyoto 606, Japan
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Abstract

Single crystal cubic silicon carbide ( 3C-SiC ) has been deposited on Si(100) by atmospheric CVD at 1350°C using Si2(CH3)6. The 3C-SiC epilayers were characterized by XRD, Raman scattering and photoluminescence (PL). The 3C-SiC distinct TO near 796 cm−1 and LO near 973 cm−1 were recorded by Raman measurement. The PL spectra of SiC films at 11K included the nitrogen-bound exciton (N-BE) lines, the ‘defect-related’ W band near 2.15eV, and 2.13eV peak corresponding to D-A pair recombination as well as the ‘divacancy-related’ D 1 peak at 1.97eV. The thickness dependences of Raman and PL measurement were made and it was observed that tensile stress and strain in films decrease with increasing film thickness. Electrical properties of the films were measured by making schottky diodes and using Van der Pauw method. Above 300K, the electron mobility changed as μH ∼ T−1.45 ∼ −1.56 and the highest mobility was about 400 cm2V−1s−1 at room temperature. In 3C-SiC the scattering processes are affected prominently by acoustic scattering in this temperature range.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 191
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

[1] Takahashi, K., Nishino, S., Saraie, J., J. Electrochem. Soc. 139 (1992) 3565–3571.10.1149/1.2069122Google Scholar
[2] Wu, C. H., Jacob, C., Ning, X. J., et al., J. Cryst. Growth 158 (1996) 480–490.10.1016/0022-0248(95)00464-5Google Scholar
[3] Liaw, H. P. and Davis, R.F., J. Electrochem. Soc.:SOLID-STATE SCIEVCE AND TECHNOLOGY, Vol. 131 (1984) 3014–3018 10.1149/1.2115458Google Scholar
[4] Feng, Z. C., Mascarenhas, A. L., Choyke, W. J., et al., J. Appl. Phys. 64(6) (1988) 3176–3186.10.1063/1.341533Google Scholar
[5] Freitas, J. A., Bishop, S. G., Addamiano, A., et al., Mat. Res. Soc. Symp. Proc. 46. 58–586.Google Scholar
[6] Choyke, W. J., Feng, Z. C., Powell, J. A., J. Appl. Phys. 64 (6) (1988) 3163–3175.10.1063/1.341532Google Scholar
[7] Choyke, W. J., Pattick, L., Phys. Rev. B2 (1970) 4959.10.1103/PhysRevB.2.4959Google Scholar
[8] Sasaki, K., Sakuma, E., Misawa, S., Yoshida, S., Gonda, S., App. Phys. Lett. 45(1), (1984) 72–73.10.1063/1.94973Google Scholar