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Properties of Pulsed Laser Deposited CdSxTe1-x Films on Glass

Published online by Cambridge University Press:  10 February 2011

D. Compaan ,
Z. Feng ,
G. Contreras-Puente ,
C. Narayanswamy  and
A. Fischer
D. Compaan
Affiliation:
Dept. of Physics and Astronomy, Univ. of Toledo, Toledo, OH, 43606, adc@physics.utoledo.edu
Z. Feng
Affiliation:
Dept. of Physics and Astronomy, Univ. of Toledo, Toledo, OH, 43606, adc@physics.utoledo.edu
G. Contreras-Puente
Affiliation:
On sabbatical leave from E.S.F.M.-I.P.N., 07738, Mexico D.F., Mexico
C. Narayanswamy
Affiliation:
Dept. of Physics and Astronomy, Univ. of Toledo, Toledo, OH, 43606, adc@physics.utoledo.edu
A. Fischer
Affiliation:
Dept. of Physics and Astronomy, Univ. of Toledo, Toledo, OH, 43606, adc@physics.utoledo.edu
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Abstract

Interdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 426: Symposium J – Thin Films for Photovoltaic and Related Device , 1996 , 367
Copyright
Copyright © Materials Research Society 1996

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