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Pt Reactions with Ge, SiGe, and Si/SiGe Superlattices

Published online by Cambridge University Press:  25 February 2011

P. J. Wang ,
Chin-An Chang ,
B. S. Meyerson ,
J. O. Chu  and
M. J. Tejwani
P. J. Wang
Affiliation:
IBM Semiconductor R&D Center, Hopewell Junction, NY 12533
Chin-An Chang
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598.
B. S. Meyerson
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598.
J. O. Chu
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598.
M. J. Tejwani
Affiliation:
IBM Semiconductor R&D Center, Hopewell Junction, NY 12533
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Abstract

Reactions between Pt and SiGe alloy have been studied by comparing several structures: Pt/Ge, Pt/SiGe, and Pt/Si-SiGe superlattices. The Ge, SiGe layers and Si-SiGe superlattices were grown on (100) Si substrates by the ultrahigh vacuum/chemical vapor deposition technique. Pt-Ge reactions start around 200 °C, forming PtzGe. This is followed by the formation of PtGe around 300 °C. The Pt-Ge reactions are thus similar to those of Pt-Si. The reactions between Pt and SiGe, however, involve a preferential Pt-Si reaction. At 200 °C, for example, while Pt2Ge is normally seen from the Pt/Ge system, only PtzSi is detected from both x-ray diffraction and Rutherford backscattering measurements. At higher temperatures, both the PtGe and PtSi phases form. This preferential Pt-Si reaction is observed in both Pt/SiGe and Pt/Si-SiGe superlattice structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 863
Copyright
Copyright © Materials Research Society 1992

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References

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