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P-type Doping of Organic Charge Transport Materials with Tungsten Oxide

Published online by Cambridge University Press:  20 August 2015

X. M. Li ,
R. Y. Yang  and
X. A. Cao
X. M. Li
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
R. Y. Yang
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
X. A. Cao
Affiliation:
Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

The effects of WO3 doping in 4,4’-bis-9-carbozyl biphenyl (CBP) were studied through detailed electrical device characterization. A series of hole-only devices have been fabricated, where the doping level was varied from 10-40mol% and the doped CBP thickness was varied from 5-40 nm. It was found that, to achieve effective doping for improved hole injection and transport, the doping level should be greater than 20mol% and the doped layer should be at least 10 nm thick. It was also found that an energy barrier exists at the doped and undoped CBP interface, resulting in an additional voltage drop. This finding was explained by a large downward shift of the Fermi level in WO3-doped CBP, which causes band bending and depletion at the interface. Finally, simplified green phosphorescent organic light-emitting diodes (OLEDs) with CBP as the hole transport and host material were fabricated. With a WO3-doped hole transport layer, the OLEDs attained brightness above 105 cd/m2 at 20 mA/cm2, and exhibited an improved reliability under constant-current stressing as compared to undoped OLEDs.

Keywords

organicthin filmdopant
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1805: Symposium SS/TT – Fabrication and Properties of Oxide Thin Films, Nanostructures and Interfaces for Advanced Applications , 2015 , mrss15-2132220
Copyright
Copyright © Materials Research Society 2015 

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References

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