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Pulsed Laser Evaporation and Epitaxy Growth of Cd1−xMnxTe

Published online by Cambridge University Press:  21 February 2011

X.L. Zheng ,
C.A. Huber ,
P. Becla ,
M. Shih  and
D. Heiman
X.L. Zheng
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139
C.A. Huber
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139
P. Becla
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139
M. Shih
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139
D. Heiman
Affiliation:
Francis Bitter National Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, MA, 02139
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Abstract

Epitaxial layers of Cd1−xMnxTe have been grown on CdTe (100) substrates by evaporating a target with a 1.06 µm pulsed laser. The high - quality materials were characterized by photoluminescence spectroscopy (PL) and energy dispersive analysis of x-ray (EDAX). We find that the incorporation of the Mn in the epitaxial layer is about two - thirds of the concentration in the target. A comparison is made to the epitaxial layers grown on CdTe (111) and GaAs (100) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 465
Copyright
Copyright © Materials Research Society 1990

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References

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