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Pyroelectric and Piezoelectric Properties of Gan-Based Materials

Published online by Cambridge University Press:  10 February 2011

M. S. Shur ,
A. D. Bykhovski  and
R. Gaska
M. S. Shur
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA, shurm@rpi.edu
A. D. Bykhovski
Affiliation:
Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA, shurm@rpi.edu
R. Gaska
Affiliation:
APA Optics, Inc., 2950 N. E. 84th Lane, Blaine, MN 55449, USA
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Abstract

We review pyroelectric and piezoelectric properties of GaN-based materials. Pyroelectric effects in GaN have been studied in two different regimes: (i) uniform sample heating regime and (ii) under applied temperature gradient along the sample. The modeling results show that the pyroelectric coefficient, Pv, in GaN (for c-axis along the contacts) can reach 7x105 V/m-K (compared to Pv = 5x105 V/m-K for the best-known high temperature pyroelectric/piezoelectric material LiTaO3). This points to a high potential of GaN-based sensors for high temperature pyroelectronics. Piezoelectric effects strongly affect the performance of electronic and light-emitting devices based on III-N materials. Piezoelectrically induced charge in heterostructures can be as large as 3 to 4x1013 cm-2. Hence, strong lattice polarization effects provide unique possibilities for utilizing GaN-based materials in high temperature piezoelectronics and for their applications in pyroelectric detectors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G1.6
Copyright
Copyright © Materials Research Society 1999

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