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Quantitative Study of Metal Gettering in Silicon

Published online by Cambridge University Press:  28 February 2011

Etienne G. Colas ,
E. R. Weber  and
S. Hahn
Etienne G. Colas
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, Ca 94720
E. R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, Ca 94720
S. Hahn
Affiliation:
Siltec, Mountain View, Ca. 94043
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Abstract

Intrinsic gettering of iron in silicon has been investigated with a novel quantitative approach. Concentrations of electrically active, interstitial iron were determined by Electron Pararnagnetic Resonnance before, and after, various annealing cycles, using Cz silicon with oxygen precipitates of different well defined morphologies. Significant differences in the gettering rate in as-grown Cz and Cz silicon with high temperature oxygen precipitates were found. High temperature treatments after metal gettering resulted in the re-emission of the transition metal atoms for both as-grown and high temperature precipitated Cz silicon. This allowed the conclusion that gettering took place via FeSi2 formation in these cases and did not involve any thermally more stable phases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 59: Symposium K – Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon , 1985 , 341
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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