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Quasi-Ballistic Stable Electron Emission from Porous Silicon Cold Cathodes

Published online by Cambridge University Press:  10 February 2011

X. Sheng  and
N. Koshida
X. Sheng
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
N. Koshida
Affiliation:
Division of Electronic and Information Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184, Japan
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Abstract

Based on the previously-reported porosity multilayer technique, cold electron emission properties of porous silicon (PS) electroluminescent diodes with a structure of Au/PS/n-type Si are further improved by introducing a graded-band multilayer structure. It is shown that electrons are quasiballisticly emitted from PS diodes owing to a significantly reduced electron scattering in PS layer. As a result, the emission current shows a fluctuation-free behavior. These observations are very important for both understanding the electron transport in PS and developing high performance electron emitters in application to vacuum microelectronic technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 509: Symposium C – Materials Issues in Vacuum Microelectronics , 1998 , 193
Copyright
Copyright © Materials Research Society 1998

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