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Rapid Thermal Annealing of Be Implanted in 0.53Ga 0.47As

Published online by Cambridge University Press:  26 February 2011

Christine S. Lam  and
Clifton G. Fonstad
Christine S. Lam
Affiliation:
Department of Electrical Engineering and Computer Science Center for MaterialsScience and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
Clifton G. Fonstad
Affiliation:
Department of Electrical Engineering and Computer Science Center for MaterialsScience and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
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Abstract

Rapid thermal annealing (RTA) techniques have been developed to activate shallow, high dose implants in InGaAs. Activation of deep, multiple energy high dose beryllium implants was also investigated. Two-step RTA cycles which peaked at a high temperature momentarily and then held at a lower temperature for 3 to 10 seconds were used to activate the implanted dopants. Over 80% activation was achieved. The results are superior to furnace anneal results, and at least comparable to graphite strip heater results. Increasing the anneal temperature on higher dose implants, however, type conversion was observed when the peak temperature exceeded a certain value.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 52: Symposium B – Rapid Thermal Processing , 1985 , 403
Copyright
Copyright © Materials Research Society 1986

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References

1. Tabatabaie-Alavi, K., Choudhury, Anmm, Alavi, K., Vlcek, J., Slater, N.J., Fonastad, C.G., IEEE Electron Devices Lett. EDL-3(12), 172 (1982).Google Scholar
2. Choudhury, Anmm, Slater, N.J., Tabatabaie-Alavi, K., Fonstad, C.G. Appl. Phys. Lett. 40(7), 607 (1982).CrossRefGoogle Scholar
3. Tell, B., Leheny, R.F., Liao, A.S.B., Bridges, T.J., Burkhardt, E.G., Chang, T.Y., Beebe, E.D., Appl. Phys. Lett. 44(4), 438 (1984).Google Scholar
4. Chai, Y.G., Yuen, C., Zdasiuk, G.A., IEEE Trans. Electron Devices ED-32(5), 972 (1985).Google Scholar