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Rbs and Pixe Analysis Of Hg1-xCdxTe grown by MOCVD.

Published online by Cambridge University Press:  25 February 2011

S.P. Russo ,
R.G. Elliman ,
P.N. Johnston  and
G.N. Pain
S.P. Russo
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
R.G. Elliman
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
P.N. Johnston
Affiliation:
Microelectronics and Materials Technology Centre, Royal Melbourne Institute of Technology, 3001, Australia
G.N. Pain
Affiliation:
Telecom Australia Research Laboratories, 3168, Australia
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Abstract

The techniques, Particle Induced X-ray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) have been used to investigate compositional and thickness uniformity of Hg1-xCdxTe (MCT) grown on GaAs substrates by Metal Organic Chemical Vapour Deposition (MOCVD). Composition and thickness variations are reported for orientations perpendicular and parallel to gas flow in the MOCVD reactor. Crystalline quality of the MCT layer was also determined by RBS channelling analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 23
Copyright
Copyright © Materials Research Society 1991

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References

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