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Reaction of Excess Silicon Interstitals in the Presence of Arsenic and Germanium

Published online by Cambridge University Press:  17 March 2011

R. Brindos ,
P. H. Keys ,
M. Griglione ,
K. S. Jones ,
M. E. Law ,
Aditya Agarwal  and
Ebrahim Andideh
R. Brindos
Affiliation:
Department of Materials Science and Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
P. H. Keys
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
M. Griglione
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
K. S. Jones
Affiliation:
Department of Materials Science and Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
M. E. Law
Affiliation:
Department of Electrical and Computer Engineering, Swamp Center, 525 Engineering Bldg. #33University of Florida, Gainesville, FL 32611-6130
Aditya Agarwal
Affiliation:
Eaton Corporation, Beverly, MA 01915
Ebrahim Andideh
Affiliation:
Intel Corporation, Hillsboro, OR 97124-6497
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Abstract

CVD grown boron marker layers were used to monitor the release of silicon interstitials from an arsenic doped surface region that was subsequently implanted with silicon. These structures were annealed for various times at 750°C under a nitrogen gas flow. A comparison of boron spike enhancement and defect dissolution is made. It is shown that enhancement values from the Si+ implant were reduced at short times for samples containing arsenic compared to samples implanted with Si+ alone or As+ alone. The TEM results showed that defect densities were dramatically reduced for the samples containing As. These results imply that the previously reported reduction in {311} formation observed in As doped wells is most likely not a Fermi level effect and is consistent with the formation of As interstitial clusters (AsIC's). The data shows that AsIC's form and control extended defect formation and slow the enhanced diffusion.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B8.4
Copyright
Copyright © Materials Research Society 2000

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