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Reactions at the Titanium-Silicon Interface Studied Using Hot-Stage Tem

Published online by Cambridge University Press:  25 February 2011

Amol Kirtikar  and
Robert Sinclair
Amol Kirtikar
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305.
Robert Sinclair
Affiliation:
Department of Materials Science & Engineering, Stanford University, Stanford, CA 94305.
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Abstract

The interaction of titanium thin films sputter-deposited onto single crystal silicon was studied by in situ heating experiments within the TEM. Reactions at the Ti-Si interface including amorphization, crystallization, allotropie phase transformations and agglomeration have been observed in real time and recorded on videotape. Interpretation of these recordings can yield a wealth of information on the silicidation process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 227
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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