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Reactive Laser–Sputtering for Amorphous Silicon Films

Published online by Cambridge University Press:  15 February 2011

M. Hanabusa  and
M. Suzuki
M. Hanabusa
Affiliation:
School of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi, 440, Japan
M. Suzuki
Affiliation:
School of Electrical and Electronic Engineering, Toyohashi University of Technology, Tenpaku, Toyohashi, 440, Japan
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Abstract

Intense, Q-switched Nd:YAG laser pulses were used to vaporize a silicon target. The pulsed atomic vapor generated produces amorphous silicon films at unusually fast accumulation speeds of 106 Å/s. Despite this speed, reactive deposition is made possible simply by evaporating in a reactive gas atmosphere. For instance, hydrogenated films have been produced by evaporating in hydrogen. Atomic hydrogen generated by thermal decomposition at a laserirradiated target spot is responsible for hydrogenation. Dynamics of this laser-induced deposition have been studied by a spectroscopic technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 559
Copyright
Copyright © Materials Research Society 1982

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References

REFERENCES

1. Amorphous Semiconductors, Brodsky, M. H. ed. (Springer, Berlin, 1979).Google Scholar
2. Hanabusa, M., Suzuki, M. and Nishigaki, S., Appl. Phys. Lett. 38, 385 (1981).CrossRefGoogle Scholar
3. Hanabusa, M. and Suzuki, M., Appl. Phys. Lett. 39, 431 (1981).CrossRefGoogle Scholar
4. Paul, W., Lewis, A. J., Connell, G. A. N. and Moustakes, T. D., Solid State Commun. 20, 969 (1976).CrossRefGoogle Scholar
5. Brodsky, M. H., Cardona, M. and Cuomo, J. J., Phys. Rev. B 16, 3556 (1977).CrossRefGoogle Scholar
6. References cited in ref. 3.Google Scholar
7. Hasted, J. B., Physics of Atomic Collisions, 2nd ed. (Elsevier, New York, 1972) chap. 3.Google Scholar
8. Fang, C. J., Ley, L., Shanks, H. R., Gruntz, K. J. and Cardona, M., Phys. Rev. B 22, 6140 (1980).CrossRefGoogle Scholar
9. Matsumura, M., Nakagome, Y. and Furukawa, S., J. Appl. Phys. 52, 291 (1981).CrossRefGoogle Scholar