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Reassessment of Acceptor Passivation Models in p-Type Hydrogenated GaAs

Published online by Cambridge University Press:  25 February 2011

I. Szafranek  and
G.E. Stillman
I. Szafranek
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
G.E. Stillman
Affiliation:
Center for Compound Semiconductor Microelectronics, Materials Research Laboratory and Coordinated Science Laboratory, University of Illinois at Urbana-Champaign, IL 61801
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Abstract

The existing microscopic models of acceptor passivation in p-type hydrogenated GaAs are reviewed in light of new experimental results concerning the relative thermodynamic stability of the passivating complexes. In particular, the present model for neutralization of Group II acceptors, Be, Mg and Zn, on Ga sites is shown to be inadequate to account for the observed trends, which imply existence of a strong interaction between the hydrogen and acceptor. It is proposed that a direct acceptor-hydrogen bond is formed due to attractive Coulomb interaction between the ionized species. The relative stability of the pair complex can be then explained based on electronegativity of the acceptor species. Passivation at intermediate pair separations up to about twice the Bohr radius of the nearest acceptor, is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 483
Copyright
Copyright © Materials Research Society 1990

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