Hostname: page-component-848d4c4894-x5gtn Total loading time: 0 Render date: 2024-05-17T13:48:09.097Z Has data issue: false hasContentIssue false
  • English
  • Français

Recrystallisation of Cadmium Sulphide Powder Films with a CO2 Laser

Published online by Cambridge University Press:  28 February 2011

P. E. Barden  and
T. J. Cumberbatch
P. E. Barden
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge, England CB2 1PZ
T. J. Cumberbatch
Affiliation:
Engineering Department, Cambridge University, Trumpington Street, Cambridge, England CB2 1PZ
Get access

Abstract

Thin films (1–2μm) of cadmium sulphide, deposited by electrophoresis, consist of a close packed layer of randomly oriented cubic-phase microcrystalline particles with an average diameter of 30nm. A CW CO2 laser, operating at 10.6μm has been used to convert this into a polycrystalline structure with columnar crystals, of hexagonal phase, which extend through the thickness of the film and whose c-axis is perpendicular to the substrate. The recrystallised regions comprise aligned grains up to 300nm in diameter whose cathodoluminescence spectrum exhibits a narrow peak centred at 2.42eV with a half width identical to that for evaporated CdS (0.1eV).

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 293
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Cumberbatch, T.J. Final Report CEC Contract No ESC-R-032-UK, 1983.Google Scholar
[2] Daweritz, L., J.Cryst.Growth 23, 307 (1974).Google Scholar
[3] Cumberbatch, T.J., McInally, I.D. and Gibbons, S.P., in Microscopy of Semiconducting Materials 1983, edited by A.G., Cullis, S.M., Davidson and G., R Booker (Institute of Physics, Bristol, 1983), p.195.Google Scholar
[4] Watkins, G.D., Inst. of Physics Conf. Ser. 31, 95 (1977).Google Scholar
[5] Feenstra, R.M., Parsons, R.R., Shepherd, F.R., Westwood, W.D. and Ingrey, S.J. in Laser Solid Interactions and Laser Processing - 1978, edited by S.D., Ferris, H.J., Leamy and J.M., Poate (American Institute of Physics, New York, (1979) p.665.Google Scholar
[6] Martinez, G., Martinez, J.C. and Zehe, A., Appl.Phys.Lett. 40, 1031 (1982).Google Scholar
[7] As, D.J., Palmetshofer, L., Schuller, J. and Lischka, K., in Laser Processing and Diagnostics, edited by Bauerle, D. (Springer-Verlag, Berlin 1984) p. 61.Google Scholar
[8] Orton, J.W. and Powell, M.J., Rep. Prog. Phys. 43, 1263 (1980).CrossRefGoogle Scholar
[9] Orton, J.W., Goldsmith, B.J., Powell, M.J. and Chapman, J.A., Appl.Phys.Lett. 37, 557 (1980).CrossRefGoogle Scholar