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Relative Stability of Perfect and Faulted Dislocation Loops in Silicon

Published online by Cambridge University Press:  10 February 2011

M. Omri ,
B. de Mauduit  and
A. Claverie
M. Omri
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse
B. de Mauduit
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse
A. Claverie
Affiliation:
Ion Implantation Group, CEMES/CNRS, BP 4347, F-31055 Toulouse
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Abstract

We have studied by TEM the thermal evolution of a population of extrinsic defects composed of a mixture of both perfect and faulted dislocation loops (PDL's and FDL's respectively). It is shown that, when isolated from an external sink, the FDL's trap the Si interstitial atoms emitted by PDL's. When a highly recombining surface is located close to the defects, it preferably « pumps » the PDL's. On the contrary, injecting Si(int)'s from the surface helps stabilizing the PDL's while the FDL's grow. These experiments clearly show that FDL's are more stable, i.e. have higher binding energies than PDL's.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 568: Symposium S – Silicon Front-End Processing-Physics & Technology of Dopant… , 1999 , 219
Copyright
Copyright © Materials Research Society 1999

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References

REFERENCES

1. Stolk, P.A., Gossmann, H. J., Eaglesham, D. J., Rafferty, D. C., Gilmer, G. H., Jaraiz, M., Poate, J. M., Luftman, H. S., Haynes, T. E., J. Appl. Phys. 81 (1997) 6031, and references therein.Google Scholar
2. Bonafos, C., Claverie, A., Omri, M., Mathiot, D., Alquier, D. and Martinez, A., J. Appl. Phys. 82 (6) (1997), 2855.Google Scholar
3. Claverie, A., Giles, L. F., Omri, M., Mauduit, B. de, Assayg, G. Ben and Mathiot, D., Nucl. Instr. Meth. in Phys. Res. B147 (1999), 1.Google Scholar
4. Cowern, N. E. B., Alquier, D., Omri, M., Claverie, A. and Nejim, A., Nucl. Instr; Meth. in Phys. Res. B 148, (1999), 257.Google Scholar
5. Omri, M., Bonafos, C., Claverie, A., Nejim, A., Cristiano, F., Alquier, D., Martinez, A. and Cowern, N. E. B., Nucl. Instr. and Meth. in Phys. Res. B120 (1996), 5.Google Scholar
6. Seibt, M., Imscheliweiller, J. and Hefner, H. A., Mat. Res. Soc. Symp. Proc. 316, (1994), 167.Google Scholar
7. Raman, R., Law, M. E., Krishnamoorthy, V. and Jones, K. S., Appl. Phys. Lett. 74 (5) (1999), 700.Google Scholar
8. Mauduit, B. de, Lanab, L., Bergaud, C., Faye, M. M., Martinez, A., and Claverie, A., Nucl. Inst. and Meth. in Phys. Res. B 84 (1994), 190.Google Scholar
9. Lin, J. and Jones, K. S., Appl. Phys. Lett. 73 (25) (1998), 3748.Google Scholar
10. Bonafos, C., Mathiot, D. and Claverie, A.., J. Appl. Phys. 83 (1998), 3008.Google Scholar
11. Meng, H. L., Prussin, S., Law, M. E. and Jones, K. S., J. Appl. Phys. 73 (1993), 955.Google Scholar
12. Skarlatos, D., Omri, M.. Claverie, A. and Tsoukalas, D., Journal of Electrochemical Society, (in press).Google Scholar