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Relaxation Behavior of Metastable As and P Concentrations in Si After Pulsed and CW Laser Annealing

Published online by Cambridge University Press:  22 February 2011

J. Goetzlich ,
P.H. Tsien  and
H. Ryssel
J. Goetzlich
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie, München, West Germany
P.H. Tsien
Affiliation:
Tsinghua University, Beijing, People's Republic of China
H. Ryssel
Affiliation:
Fraunhofer-Institut für Festkörpertechnologie, München, West Germany
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Abstract

Metastable solid solutions of arsenic and phosphorus atoms were created by high-dose ion implantation in silicon, followed by annealing either with pulsed (Nd:YAG) or CW (CO2;) laser irradiation. The relaxation of these supersaturated layers was investigated by thermal post-treatment at temperatures between 600 and 1000°C. By measuring the time dependence of the sheet carrier concentration, the time constant and the activation energies for the relaxation of the electrically-active As and P atoms were investigated. In addition, the equilibrium carrier concentrations at different temperatures were obtained by Halleffect measurements in connection with a layer-removal technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 235
Copyright
Copyright © Materials Research Society 1984

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References

REFERENCES

1.Laser-Solid Interactions and Laser Processing-1978, Ferris, S.D., Leamy, H.J., and Poate, J.M., Edit., AIP, New York, 1979Google Scholar
2.Laser and Electron-Beam Processing of Materials, White, C.W. and Peercy, P.S., Edit., Academic, New York, 1980Google Scholar
3.Laser and Electron-Beam Solid Interactions and Materials Processing, Gibbons, J.F., Hess, L.D., and Sigmon, T.W., Edit., North-Holland, New York, 1981Google Scholar
4.Laser and Electron-Beam Interactions with Solids, Appleton, B.R. and Celler, G.K., Edit., North-Holland, New York, 1982Google Scholar
5.Laser and Transient Processing of Materials, Narayan, J., Brown, W.L., and Lemons, R.A., Edit., North-Holland, New York, 1983Google Scholar
6.Chu, W.K., Mader, S.R., and Rimini, E. in [2,] p. 153Google Scholar
7.Wilson, S.R., Paulson, W.M., Gregory, R.B., Tam, G., White, C.W., Appleton, B.R., Rai, A.K. and Pronko, P.P., J. Appl. Phys. 54, 5004 (1983)Google Scholar
8.Lietoila, A., Gibbons, J.F., and Sigmon, T.W., Appl. Phys. Lett. 36, 765 (1980)Google Scholar
9.Götzlich, J., Tsien, P.H., Henghuber, G., and Ryssel, H. in Ion Implantation: Equipment and Techniques, Ryssel, H., and Glawischnig, H.,Edit., Springer-Verlag, Berlin 1983Google Scholar
10.Cullis, A.G., Webber, H.C., Poate, J.M., and Simons, A.L., Appl. Phys. Lett. 36, 320 (1980)Google Scholar
11.Tsien, P.H., Ryssel, H., Röschenthaler, D., and Ruge, I., J. Appl. Phys. 52, 2987 (1981)Google Scholar
12.Tsien, P.H., Götzlich, J., Ryssel, H., and Ruge, I., J. Appl. Phys. 53, 663 (1982)Google Scholar
13.Miyao, M., Itoh, K., Tamura, M., Tamura, H., and Tokuyama, T., J. Appl. Phys. 51, 4139 (1980)Google Scholar
14.Finetti, M., Negrini, P., Solmi, S., and Nobili, D., J. Electrochem. Soc. 128, 1313 (1981)Google Scholar
15.Itoh, K., Sasaki, Y., Mitsuishi, T., Miyao, M., and Tamura, M., Jap. Journ. of Appl. Phys. 21, L 245 (1982)Google Scholar
16.Götzlich, J., and Ryssel, H., (to be published)Google Scholar
17.Chu, W.K., Appl. Phys. Lett. 36, 273 (1980)Google Scholar