Hostname: page-component-848d4c4894-wg55d Total loading time: 0 Render date: 2024-05-31T10:11:32.633Z Has data issue: false hasContentIssue false
  • English
  • Français

Reliability and Copper Interconnections with Low Dielectric Constant Materials

Published online by Cambridge University Press:  10 February 2011

C-K. Hu
C-K. Hu*
Affiliation:
IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY., 10598
Get access

Abstract

The materials, process integration, and reliability issues in the development of multilevel electroplated Cu/polyimide on-chip interconnections are described. A combination of: good diffusion/adhesion barrier layers consisting of a metal liner plus the insulator Si3N4, and W stud/Si contacts resulted in a highly reliable IC chip. Electromigration of Cu damascene lines in both SiO2 and polyimide structures was investigated. Similar void growth was observed at the cathode ends of both the interconnect systems. However, the shapes of protrusions at the anode ends of the lines were different. Although the activation energies for both near bamboo-like Cu/SiO2 and Cu/polyimide were both 1.1 eV, the electromigration lifetime of the former was significantly longer. The difference is largely attributable to the poorer thermal conductivity of polyimide.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 305
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Small, M.B., and Pearson, D. J., IBM J. Res. develop. 34, 858 (1990).Google Scholar
2. Edelstein, D.C., Sai-Halasz, G.A., and Mii, Y.-J., IBM J. Res. Develop.,39, 383 (1995).Google Scholar
3. Hu, C.-K., Small, M.B., Kaufman, F., and Pearson, D.J., Mat. Res. Soc., 225, 369 (1990).Google Scholar
4. Luther, B., et.al., Proc. 10th VLSI Multilevel Interconnections Conf., p.15, (1993).Google Scholar
5. Awaya, N., Ohno, K. and Arita, Y., J. Electrochem. Society, 142, 3173 (1995)Google Scholar
6. See the August issue of Mat. Res. Soc. Bull. vol. 19 (1994) and Special issue of Thin Solid Films, vol. 262 nos, 1–2 (1995).Google Scholar
7. Edelstein, D., et.al. IEEE IEDM, p. 773 (1997).Google Scholar
8. Venkatraman, R., et.al. IEEE IEDM, p. 770 (1997).Google Scholar
9. Hu, C.-K. and Harper, J.M.E., Materials Chem. Phys. 52, 5 (1998).Google Scholar
10. Hu, C.-K., Edelstein, D.C., Uzoh, C., Rathore, H.R., Electrochemical Soc. Meeting Abstracts, 96–2, p.347 (1996).Google Scholar
11. Chow, M.M., Guthrie, W.L., Cronin, J.E., Kanta, C.W., Luther, B., Perry, K.A., Stanley, C.L., US Patent 4,789,648 (1988).Google Scholar
12. Hu, C-K., Lee, K.Y., Gignac, L., Rossnagel, S.M., Uzoh, C., Chan, K., Roper, P. and Harper, J.M.E., to be published in Mat. Res. Soc., Symp. 1(1998).Google Scholar
13. Edelstein, D., Scheuermann, M., Geppert, L., Proc. VLSI Multilevel Interconnect. Conf., p. 8 (1993); D. Edelstein, Proc. SPIE, vol. 1389, 352 (1990).Google Scholar
14. Herminghause, S., Boese, D., Yoon, D., Smith, B., Appl. Phys. Left., 59, 1043 (1991).Google Scholar
15. Liu, C.S. and Chen, S.T., Thin Solid Films, 260, 187 (1995).Google Scholar
16. Stolt, L., Charai, A., d‘Heurle, F.M., Fryer, P.M. and Harper, J.M.E., J.Vac. Sci. Technol. A9, 1501 (1991).Google Scholar
17. Hu, C.-K., Chang, S., Small, M.B. and Lewis, J.E., Proc. 3rd IEEE VLSI Multilevel Interconnection Conf., p. 181 (1986).Google Scholar
18.See for example, Wang, S.-Q., Mat. Res. Soc. Bulletin, 19, p.30 (1994).Google Scholar
19. Hu, C.-K., Luther, B., Kaufman, F.B., Hummel, J., Uzoh, C., and Pearson, D.J., Thin Solid Films, 262, 84 (1995).Google Scholar
20. Moy, D., Schadt, M., Hu, C-K., Kauman, F., Ray, A., Mazzeo, N., Baran, E., and Pearson, D.J., Proc. 6th International VLSI Mutilevel Interconnection Conf., p.26 (1989).Google Scholar
21. Blech, I. A., J. Appl. Phys., 47, 1203 (1976).Google Scholar
22. Hu, C.-K., Thin Solid Films, 260, 124 (1995).Google Scholar
23. Hu, C.-K., Lee, K.Y., Gignac, L., Carruthers, R., Thin Solid Films, Vol.308–309, p. 443(1997).Google Scholar
24. Hu, C.-K., Lee, K.Y., Gupta, D., and Blauner, P., Mat. Res. Soc. Symp. Proc., 428, p.43 (1996).Google Scholar
25. Surholt, T., Mishin, Yu. M., and Herzig, Ch., Phys. Rev., B50, p.3577 (1994).Google Scholar
26. Butrympwicz, D. B., Manning, J. R., and Read, M. E., J. Phys. Chems. Ref. Data, Vol. 2, no.3, p. 643 (1977).Google Scholar
27. Rothman, S.J., and Peterson, N.L., Phys. Status Solidi, 35, p.305 (1969).Google Scholar
28. Hu, C.-K. and Reynolds, S., Electrochem. Soc. Proc., Vol.97–25, p. 1514 (1997).Google Scholar
29. Hu, C.-K. and Luther, B., Materials Chem. Phys., 41, 1 (1995).Google Scholar
30. Ryan, E. T., Mckerrow, A.J., Leu, J. and Ho, P.S., Oct. Mat. Res. Soc. Bull., 22, p.49 (1997),Google Scholar
31. Hu, C.-K., Small, M.B., and Ho, P.S., J. Appl. Phys., 74, 969 (1993).Google Scholar
32. Lee, W.W. and Ho, P.S., Oct. Mat. Res. Soc. Bull., 22, p.49 (1997).Google Scholar