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Reliability of GaN on Si FETs and MMICs

Published online by Cambridge University Press:  31 January 2011

Donald A. Gajewski ,
Walter Nagy ,
Allen W. Hanson ,
J.W. Johnson  and
K J Linthicum
Donald A. Gajewski
Affiliation:
dgajewski@nitronex.com, Nitronex Corporation, Durham, North Carolina, United States
Walter Nagy
Affiliation:
wnagy@nitronex.com, Nitronex Corporation, Durham, North Carolina, United States
Allen W. Hanson
Affiliation:
ahanson@nitronex.com, Nitronex Corporation, Durham, North Carolina, United States
J.W. Johnson
Affiliation:
wjohnson@nitronex.com, Nitronex Corporation, Raleigh, North Carolina, United States
K J Linthicum
Affiliation:
klinthicum@nitronex.com, Nitronex Corporation, Durham, North Carolina, United States
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Abstract

This paper reviews the reliability results for the gallium nitride on silicon (GaN-on-Si) technologies for commercial and military communications markets. Two technology platforms have been qualified for volume production: one consisting of discrete heterostructure field effect transistors (HFETs) and the other consisting of HFETs integrated with passive components to form monolithic microwave integrated circuits (MMICs). The technology platform qualifications for volume production have been achieved through intrinsic reliability tests on the active and passive device elements as well as extrinsic reliability tests at the product level. This paper presents reliability results on accelerated life test (ALT), high temperature operating life under DC and RF stress (DC/RF-HTOL), electrostatic discharge (ESD), ramped voltage breakdown, electromigration, temperature cycling, robustness under voltage standing wave ratio (VSWR) mismatch conditions, and diode stability. Degradation and breakdown mechanisms are discussed in relation to material properties reliability. The results show that the HFET and MMIC technology platforms display reliable performance for 20 year product lifetime at worst case operating conditions.

Keywords

semiconductingelectronic materialmicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B06-04
Copyright
Copyright © Materials Research Society 2010

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References

1. Johnson, J.W., Piner, E.L., Vescan, A., Therrien, R., Rajagopal, P., Roberts., J.C., Brown, J.D., Singhal, S., & Linthicum, K.L., “12W/mm AlGaN-GaN HFETs on silicon substrates.” IEEE Electron Device Letters, 25(7), 459–461. (2004).10.1109/LED.2004.831190Google Scholar
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