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Role of C, O and H in III-V Nitrides

Published online by Cambridge University Press:  21 February 2011

C. R. Abernathy ,
S. J. Pearton ,
J. D. MacKenzie ,
J. W. Lee ,
C. B. Vartuli ,
R. G. Wilson ,
R. J. Shul ,
J. C. Zolper  and
J. M. Zavada
C. R. Abernathy
Affiliation:
University of Florida, Gainesville Fl 32611
S. J. Pearton
Affiliation:
University of Florida, Gainesville Fl 32611
J. D. MacKenzie
Affiliation:
University of Florida, Gainesville Fl 32611
J. W. Lee
Affiliation:
University of Florida, Gainesville Fl 32611
C. B. Vartuli
Affiliation:
University of Florida, Gainesville Fl 32611
R. G. Wilson
Affiliation:
Hughes Research Laboratories, Malibu, CA 90265
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185;and
J. C. Zolper
Affiliation:
Sandia National Laboratories, Albuquerque NM 87185;and
J. M. Zavada
Affiliation:
U. S. Army Research Laboratory, RTP, NC 27709
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Abstract

The light ion impurities C, O and H have been implanted or diffused into GaN and related compounds and their effect on the electrical properties of these materials measured by Hall, C-V and SIMS as a function of annealing temperatures from 300-1100ºC. While C in as-grown GaN appears to create an acceptor under MOMBE conditions, implanted C shows no measurable activity. Similarly, implanted O does not show any shallow donor activity after annealing at ≤ 700°C, but can create high resistivity regions (106 Ω/□) in GaN, AlInN and InGaN for device isolation when annealed at 500–700°C. Finally, hydrogen is found to passivate shallow donor and acceptor states in GaN, InN, InAIN and InGaN, with dissociation of the neutral complexes at >450°C. The liberated hydrogen does not leave the nitride films until much higher annealing temperatures (>800°C). Typical reactivation energies are ∼2.0eV for impurity-hydrogen complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 685
Copyright
Copyright © Materials Research Society 1996

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References

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